{"title":"The electromigration short — Length effect and its impact on circuit reliability","authors":"A. Oates","doi":"10.1109/IITC.2013.6615553","DOIUrl":null,"url":null,"abstract":"The short-length effect, whereby electromigration is eliminated due a mechanical stress-gradient induced backflow has a profound impact on the characteristics of electromigration failure. Here we review our recent studies of electromigration failure at short lengths in Cu/low-k interconnects. We show that voiding failures can occur at current densities below the critical value. We develop a model that accurately predicts failure distributions as a function of stress variables, conductor geometry, and presence of passive reservoirs. We also discuss the scaling of electromigration at short - lengths, and show that failure times decrease even more rapidly than long-lengths with technology scaling.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"20 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The short-length effect, whereby electromigration is eliminated due a mechanical stress-gradient induced backflow has a profound impact on the characteristics of electromigration failure. Here we review our recent studies of electromigration failure at short lengths in Cu/low-k interconnects. We show that voiding failures can occur at current densities below the critical value. We develop a model that accurately predicts failure distributions as a function of stress variables, conductor geometry, and presence of passive reservoirs. We also discuss the scaling of electromigration at short - lengths, and show that failure times decrease even more rapidly than long-lengths with technology scaling.