S. Samanta, P.K. Singh, W. Yoo, G. Samudra, Y. Yeo, L. Bera, N. Balasubramanian
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引用次数: 31
Abstract
This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial
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