A low voltage 8.4 ppm/°C voltage reference based on subthreshold MOSFETs

Lixia Zheng, Jin Wu, Xia Zhao
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Abstract

A CMOS voltage reference based on subthreshold operation is proposed. The current mirror mismatch error resulting from the channel length modulation effect is improved by using a self-cascode operational amplifer. The reference generates a constant reference voltage of 639 mV at supply voltage of 1.2V with power consumption of 18uW at room temperature fabricated in CSMC 0.18um CMOS technology. It achieves a temperature coefficient of 8.4ppm/°C for the temperature range from •20 °C to 120 °C
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基于亚阈值mosfet的低电压8.4 ppm/°C电压基准
提出了一种基于亚阈值运算的CMOS电压基准电路。采用自级联码运算放大器,改善了由信道长度调制效应引起的电流镜像失配误差。该基准在电源电压为1.2V时产生恒定的参考电压639 mV,室温下功耗为18w,采用CSMC 0.18um CMOS技术制造。在•20°C至120°C的温度范围内,温度系数为8.4ppm/°C
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