{"title":"A Si BiCMOS trans-impedance amplifier for 10 Gb SONET receiver","authors":"H.H. Kim, S. Chandrasekhar, C. Burrus, J. Bauman","doi":"10.1109/VLSIC.2000.852881","DOIUrl":null,"url":null,"abstract":"A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.","PeriodicalId":6361,"journal":{"name":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","volume":"22 1","pages":"170-173"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2000.852881","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.
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