Research on Nitride Semiconductors from the Dawn, through the Present, to the Future

T. Matsuoka
{"title":"Research on Nitride Semiconductors from the Dawn, through the Present, to the Future","authors":"T. Matsuoka","doi":"10.7567/ssdm.2017.pl-2-02","DOIUrl":null,"url":null,"abstract":"The history of the birth of a blue LED consisted of nitride semiconductors, and the effect in the energy saving by solid state lighting are described. By taking advantage of the characteristics of nitride semiconductors with wide band-gap, the development of the high frequency and the high power transistors are also intro-","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"157 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/ssdm.2017.pl-2-02","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The history of the birth of a blue LED consisted of nitride semiconductors, and the effect in the energy saving by solid state lighting are described. By taking advantage of the characteristics of nitride semiconductors with wide band-gap, the development of the high frequency and the high power transistors are also intro-
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
从黎明到现在再到未来的氮化物半导体研究
介绍了由氮化半导体组成的蓝色LED的诞生历史,以及固态照明在节能方面的作用。利用氮化半导体宽带隙的特点,介绍了高频、大功率晶体管的发展
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Transient Absorption Spectroscopy of TlBr Crystals Using Pulsed Electron Beams Fabrication of Recessed-Gate AlGaN/GaN Hemts Utilizing Contactless Photo-Electrochemical (CL-PEC) Etching Inductively Coupled Plasma Sputtering System for Oxide Semiconductors for a Large Area Deposition Removal of Metal Ions from Water Using Oxygen Plasmas Effect of Mo, W Substitution on Ferroelectric Characteristics, Crystal and Electronic Structure of Bi0.5K0.5TiO3-BiFeO3-KTaO3 Based Ferroelectric Ceramics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1