Study of point defects in ns pulsed-laser annealed CuInSe2 thin films

A. Bhatia, H. Meadows, M. C. Hymas, E. Smith, P. Dale, M. Scarpulla
{"title":"Study of point defects in ns pulsed-laser annealed CuInSe2 thin films","authors":"A. Bhatia, H. Meadows, M. C. Hymas, E. Smith, P. Dale, M. Scarpulla","doi":"10.1109/PVSC-VOL2.2013.6656702","DOIUrl":null,"url":null,"abstract":"Pulsed-laser annealing (PLA) of Cu(In,Ga)Se2 thin films has been shown to improve their optoelectronic properties. Here we investigate the effects of ns PLA on the identity of traps in CuInSe2 films prepared by electrodeposition followed by furnace annealing with Se. Raman spectroscopy indicates a decrease in width of the A1 phonon peak and relaxation of compressive strain after PLA. Current-voltage measurements indicate improvement in ideality factor of heterojunction diode cells built from laser irradiated films. Defect spectroscopy on Schottky diode and complete solar cell reveal similar defect level for EDA_ref sample present at ≈ 200 meV. However for the sample processed at 30 mJ/cm2 we find a deep trap at ≈ 300 meV in case of Schottky diodes, whereas complete solar cells show a trap at ≈ 60 meV.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC-VOL2.2013.6656702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Pulsed-laser annealing (PLA) of Cu(In,Ga)Se2 thin films has been shown to improve their optoelectronic properties. Here we investigate the effects of ns PLA on the identity of traps in CuInSe2 films prepared by electrodeposition followed by furnace annealing with Se. Raman spectroscopy indicates a decrease in width of the A1 phonon peak and relaxation of compressive strain after PLA. Current-voltage measurements indicate improvement in ideality factor of heterojunction diode cells built from laser irradiated films. Defect spectroscopy on Schottky diode and complete solar cell reveal similar defect level for EDA_ref sample present at ≈ 200 meV. However for the sample processed at 30 mJ/cm2 we find a deep trap at ≈ 300 meV in case of Schottky diodes, whereas complete solar cells show a trap at ≈ 60 meV.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
脉冲激光退火CuInSe2薄膜的点缺陷研究
对Cu(In,Ga)Se2薄膜进行脉冲激光退火(PLA)可以改善其光电性能。在这里,我们研究了ns PLA对电沉积和Se炉退火制备的CuInSe2薄膜中陷阱特性的影响。拉曼光谱表明,聚乳酸后A1声子峰宽度减小,压缩应变松弛。电流-电压测量表明,用激光辐照薄膜制成的异质结二极管电池的理想因数有所提高。肖特基二极管和完整太阳能电池的缺陷光谱显示,在≈200 meV下,EDA_ref样品存在相似的缺陷水平。然而,对于在30 mJ/cm2下处理的样品,我们发现肖特基二极管在≈300 meV处有一个深阱,而完整的太阳能电池在≈60 meV处有一个深阱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Initial operating experience of the 1.2-MW La Ola photovoltaic system The impact of selenisation on damp heat degradation of the CIGS back contact molybdenum Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells Study of point defects in ns pulsed-laser annealed CuInSe2 thin films Optical monitoring and control of three-stage coevaporated Cu(In1−xGax)Se2 by real-time spectroscopic ellipsometry
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1