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2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2最新文献

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Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells 高效超薄~ 25微米晶体硅太阳能电池的远程等离子体化学气相沉积
Pub Date : 2013-11-07 DOI: 10.1109/PVSC-VOL2.2013.6656713
D. Sarkar, E. Onyegam, S. Saha, L. Mathew, R. Rao, M. Hilali, R. S. Smith, Dewei Xu, D. Jawarani, R. Garcia, R. Stout, A. Gurmu, M. Ainom, J. Fossum, S. Banerjee
For the first time, a remote plasma chemical vapor deposition (RPCVD) based c-Si/a-Si heterojunction solar cell process was developed on thin crystalline silicon semiconductor-on-metal (SOM) substrate. In RPCVD systems, deposition temperature, deposition rate, and the distance of the sample from the plasma source can be varied to minimize the surface damage and enhance passivation quality. A silicon heterojunction (HJ) cell without intrinsic a-Si layer passivation was fabricated on an exfoliated ∼25µm c-Si SOM foil, with an efficiency of 13.4% and open-circuit voltage of 645mV. Losses in these devices were analyzed by numerical simulations and optimum device structure was designed and performance predicted.
首次在薄晶硅金属半导体(SOM)衬底上开发了基于远程等离子体化学气相沉积(RPCVD)的c-Si/a- si异质结太阳能电池工艺。在RPCVD系统中,可以改变沉积温度、沉积速率和样品与等离子体源的距离,以尽量减少表面损伤并提高钝化质量。在脱落的~ 25µm c-Si SOM箔上制备了无本征A - si层钝化的硅异质结(HJ)电池,效率为13.4%,开路电压为645mV。通过数值模拟分析了这些器件的损耗,设计了最优器件结构并对其性能进行了预测。
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引用次数: 4
The impact of selenisation on damp heat degradation of the CIGS back contact molybdenum 硒化对CIGS背接触钼湿热降解的影响
Pub Date : 2013-11-07 DOI: 10.1109/PVSC-VOL2.2012.6656703
M. Theelen, M. Tomassini, N. Barreau, H. Steijvers, A. Branca, S. Harel, Z. Vroon, M. Zeman
Molybdenum (Mo) degrades under the influence of damp heat, thereby reducing the output of CIGS PV. In this study, Mo layers were deposited on a glass substrate by magnetron sputtering, thereby varying the deposition pressure and the addition of selenium. These samples were thoroughly analysed and degraded at 60oC/60% relative humidity (RH) and 85°C /85% RH.
钼(Mo)在湿热的影响下降解,从而降低了CIGS PV的产量。在本研究中,通过磁控溅射在玻璃衬底上沉积Mo层,从而改变沉积压力和硒的添加量。这些样品在60℃/60%相对湿度(RH)和85℃/85% RH下进行了彻底的分析和降解。
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引用次数: 8
Initial operating experience of the 1.2-MW La Ola photovoltaic system 1.2 mw La Ola光伏系统的初步运行经验
Pub Date : 2013-11-07 DOI: 10.2172/1031297
Jay Johnson, B. Schenkman, A. Ellis, J. Quiroz, C. Lenox
The 1.2-MW La Ola photovoltaic (PV) power plant in Lanai, Hawaii, has been in operation since December 2009. The host system is a small island microgrid with peak load of 5 MW. Simulations conducted as part of the interconnection study concluded that unmitigated PV output ramps had the potential to negatively affect system frequency. Based on that study, the PV system was initially allowed to operate with output limited to 50% of nameplate power capacity to reduce the potential for frequency instability due to PV variability. Based on the analysis of historical voltage, frequency, and power output data at 50% output level, the PV system has not significantly affected grid performance. However, it should be noted that the impact of PV variability on active and reactive power output of the nearby diesel generators was not evaluated.
位于夏威夷拉奈岛的1.2兆瓦的拉奥拉光伏电站自2009年12月开始运行。主机系统为小岛型微电网,峰值负荷为5mw。作为互联研究的一部分进行的模拟得出结论,未减轻的光伏输出坡道有可能对系统频率产生负面影响。基于该研究,PV系统最初被允许将输出限制在铭牌功率容量的50%,以减少由于PV可变性导致的频率不稳定的可能性。根据历史电压、频率和50%输出水平下的输出功率数据分析,光伏系统对电网性能没有明显影响。但是,需要注意的是,没有评估光伏变率对附近柴油发电机输出有功和无功功率的影响。
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引用次数: 45
Study of point defects in ns pulsed-laser annealed CuInSe2 thin films 脉冲激光退火CuInSe2薄膜的点缺陷研究
Pub Date : 2013-11-07 DOI: 10.1109/PVSC-VOL2.2013.6656702
A. Bhatia, H. Meadows, M. C. Hymas, E. Smith, P. Dale, M. Scarpulla
Pulsed-laser annealing (PLA) of Cu(In,Ga)Se2 thin films has been shown to improve their optoelectronic properties. Here we investigate the effects of ns PLA on the identity of traps in CuInSe2 films prepared by electrodeposition followed by furnace annealing with Se. Raman spectroscopy indicates a decrease in width of the A1 phonon peak and relaxation of compressive strain after PLA. Current-voltage measurements indicate improvement in ideality factor of heterojunction diode cells built from laser irradiated films. Defect spectroscopy on Schottky diode and complete solar cell reveal similar defect level for EDA_ref sample present at ≈ 200 meV. However for the sample processed at 30 mJ/cm2 we find a deep trap at ≈ 300 meV in case of Schottky diodes, whereas complete solar cells show a trap at ≈ 60 meV.
对Cu(In,Ga)Se2薄膜进行脉冲激光退火(PLA)可以改善其光电性能。在这里,我们研究了ns PLA对电沉积和Se炉退火制备的CuInSe2薄膜中陷阱特性的影响。拉曼光谱表明,聚乳酸后A1声子峰宽度减小,压缩应变松弛。电流-电压测量表明,用激光辐照薄膜制成的异质结二极管电池的理想因数有所提高。肖特基二极管和完整太阳能电池的缺陷光谱显示,在≈200 meV下,EDA_ref样品存在相似的缺陷水平。然而,对于在30 mJ/cm2下处理的样品,我们发现肖特基二极管在≈300 meV处有一个深阱,而完整的太阳能电池在≈60 meV处有一个深阱。
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引用次数: 2
Lattice-matched solar cells with 40% average efficiency in pilot production and a roadmap to 50% 点阵匹配的太阳能电池在试点生产中平均效率为40%,路线图为50%
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656724
D. Aiken, E. Dons, Sang-Soo Je, N. Miller, F. Newman, P. Patel, J. Spann
A commercial lattice-matched InGaP/InGaAs/Ge solar cell has reached an average efficiency of 40% at 500 kW/m2. The design changes that lead to this result are discussed. These data are complemented with a presentation of the latest new solar cell development results from the laboratory. Inverted metamorphic multijunction solar cells have been prototyped with 42.4% efficiency at 325 suns for concentrator applications and 33.6% efficiency at 1 sun AM0 for space applications. Six subcell devices are now under development. These results are used, along with other experimental data and other industrial constraints, as input to a computer model to predict what practical efficiency might be achievable with this device approach. The computer model suggests that 45% and 50% efficiencies are technologically feasible with a three-junction and five-junction device, respectively, at an irradiance of 500 kW/m2 and 25 °C using known materials, device architectures, and manufacturing methods.
商用晶格匹配的InGaP/InGaAs/Ge太阳能电池在500kw /m2时达到了40%的平均效率。讨论了导致这一结果的设计变更。这些数据与实验室最新的新型太阳能电池开发结果的介绍相辅相成。倒置变质多结太阳能电池的原型在325个太阳下的效率为42.4%,在1个太阳AM0的空间应用中效率为33.6%。目前正在开发六种亚单元装置。这些结果与其他实验数据和其他工业限制一起被用作计算机模型的输入,以预测这种设备方法可能实现的实际效率。计算机模型表明,使用已知材料、器件架构和制造方法,在500 kW/m2和25°C的辐照度下,三结和五结器件的效率分别为45%和50%,在技术上是可行的。
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引用次数: 0
Optical monitoring and control of three-stage coevaporated Cu(In1−xGax)Se2 by real-time spectroscopic ellipsometry 三级共蒸发Cu(In1−xGax)Se2的实时椭圆偏振光谱监测与控制
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656736
D. Attygalle, V. Ranjan, P. Aryal, P. Pradhan, S. Marsillac, N. Podraza, R. Collins
Real-time spectroscopic ellipsometry (RTSE) has been applied for in situ monitoring and control of thin-film copper-indium-gallium-diselenide, i.e., Cu(In1−xGax)Se2 (CIGS), deposition by high vacuum coevaporation in the three-stage process used for efficient photovoltaic devices. Initial studies have been performed on a ∼0.7-µm CIGS layer deposited on crystal silicon to minimize surface roughness and to develop an accurate structural/ optical model of the Cu-poor-to-Cu-rich and Cu-rich-to-Cu-poor transitions that define the ends of the second (II) and third (III) stages of growth, respectively.With a better understanding of the surface achieved through this model, correlations can be made between the surface state and the unprocessed RTSE data {ψ(t), Δ(t)}. During deposition in the solar cell configuration with 2- µm-thick CIGS on a Mo-coated glass substrate, indications of the Cu poor-to-rich and Cu rich-to-poor transitions appear clearly in {ψ(t), Δ(t)}, enabling direct control of stage II and III transitions. The transition times deduced optically are in good agreement with those identified from the film/substrate emissivity by tracking the substrate heater power. It is clear, however, that RTSE can provide higher sensitivity to these transitions and is, therefore, suitable for improved control of three-stage CIGS deposition.
实时光谱椭偏仪(RTSE)已被应用于高真空共蒸发三阶段过程中铜铟镓二硒化物(即Cu(In1−xGax)Se2 (CIGS)薄膜的原位监测和控制,该过程用于高效光伏器件。最初的研究是在沉积在晶体硅上的~ 0.7µm的CIGS层上进行的,以尽量减少表面粗糙度,并建立了贫铜到富铜和富铜到贫铜转变的精确结构/光学模型,分别定义了第二(II)和第三(III)生长阶段的末端。通过该模型更好地理解表面,可以在表面状态与未处理的RTSE数据{ψ(t), Δ(t)}之间建立相关性。在2 μ m厚CIGS的太阳能电池结构中,在mo涂层玻璃衬底上沉积时,{ψ(t), Δ(t)}清晰地显示出贫铜到富铜和富铜到贫铜的转变迹象,从而可以直接控制II阶段和III阶段的转变。光学推导的跃迁时间与通过跟踪衬底加热器功率从薄膜/衬底发射率确定的跃迁时间一致。然而,很明显,RTSE可以对这些转变提供更高的灵敏度,因此适用于改进的三级CIGS沉积控制。
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引用次数: 12
Control of Na diffusion from soda-lime glass and NaF film into Cu(In,Ga)Se2 for thin-film solar cells 薄膜太阳能电池中钠离子从钠石灰玻璃和NaF膜向Cu(In,Ga)Se2扩散的控制
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656704
Dae‐Hyung Cho, Yong‐Duck Chung, Kyu‐Seok Lee, Ju-hee Kim, Soojeong Park, Jeha Kim
We report on the effect of Na incorporation into Cu(In,Ga)Se2 (CIGS) for thin-film solar cells. Na ions were supplied by NaF films with different thicknesses, while those from the soda-lime glass substrate were controlled by a presence or an absence of a SiOx barrier. Gradually increasing a Na content in CIGS was found in the structures of CIGS/Mo/SiOx/SLG, CIGS/Mo/SLG, CIGS/5 nm-NaF/Mo/SiOx/SLG, CIGS/5 nm-NaF/Mo/SLG, CIGS/15 nm-NaF/Mo/SiOx/SLG, and CIGS/15 nm-NaF/Mo/SLG. With increasing the Na content, the CIGS (112) preferential orientation growth became dominant, while the (220/204) one was nearly constant. The grain size decreased with increasing the Na content. The cell efficiency (η) increased for relatively low Na content however the thick NaF led to a degradation of η because of poor adhesion between the CIGS and the Mo. The sample with the CIGS/5 nm-NaF/Mo/SiOx/SLG structure achieved the comparable (112)/(220/204) peak ratios, grain sizes, as well as the cell performances to a CIGS/Mo/SLG structure that contains the same Na content in the CIGS.
我们报道了Na掺入Cu(In,Ga)Se2 (CIGS)薄膜太阳能电池的影响。钠离子由不同厚度的NaF薄膜提供,而钠钙玻璃衬底的钠离子则由SiOx屏障的存在或不存在来控制。在CIGS/Mo/SiOx/SLG、CIGS/Mo/SLG、CIGS/ 5nm - naf /Mo/SiOx/SLG、CIGS/ 5nm - naf /Mo/SLG、CIGS/ 15nm - naf /Mo/SiOx/SLG和CIGS/ 15nm - naf /Mo/SiOx/SLG结构中,CIGS中Na含量逐渐增加。随着Na含量的增加,CIGS(112)优先取向生长占优势,而(220/204)优先取向生长基本不变。随着Na含量的增加,晶粒尺寸减小。当Na含量相对较低时,电池效率(η)增加,但由于较厚的NaF与Mo之间的粘附性较差,导致η下降。CIGS/5 nm-NaF/Mo/SiOx/SLG结构样品的峰比(112)/(220/204),晶粒尺寸以及电池性能与CIGS/Mo/SLG结构样品相当,在CIGS中含有相同的Na含量。
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引用次数: 1
Characterization of (AgCu)(InGa)Se2 absorber layer fabricated by a selenization process from metal precursor 金属前驱体硒化法制备(AgCu)(InGa)Se2吸收层的表征
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656787
Y. Tauchi, Kihwan Kim, Hyeonwook Park, W. Shafarman
In this paper, the effects of Ag-alloying in the selenization of metal precursors to form (AgCu) (InGa)Se2 are investigated. Metal precursors with different structures were prepared by sputtering from Cu0.77Ga0.23, Ag, and In targets. The phases and the composition of the precursor films were evaluated by X-ray diffraction, scanning electron microscopy (SEM), and energy dispersive X-ray spectrometry. The addition of a Ag layer between the Mo and Cu-Ga-In layers resulted in much less islanding of In-rich phases than typically observed in sputtered Cu-Ga-In films. Selenization at 475 °C of Ag-containing precursors resulted in better adhesion than precursors without Ag. After the selenization reaction, Ag and Cu were uniformly distributed through the film, although Ga remained near the back of the film, as was observed in precursors without Ag. A (AgCu)(InGa)Se2 -based solar cell with 13.9% efficiency was demonstrated.
本文研究了银合金化对金属前驱体硒化生成(AgCu) (InGa)Se2的影响。以Cu0.77Ga0.23、Ag和In为靶材,采用溅射法制备了不同结构的金属前驱体。采用x射线衍射、扫描电子显微镜(SEM)和能量色散x射线光谱法对前驱体膜的物相和组成进行了表征。在Mo和Cu-Ga-In层之间添加Ag层导致富in相的孤岛比通常在溅射Cu-Ga-In薄膜中观察到的要少得多。在475℃下,含银前驱体的硒化效果优于不含银的前驱体。硒化反应后,Ag和Cu均匀分布在膜中,而Ga仍在膜的背面附近,这与未添加Ag的前驱体的情况相同。证明了效率为13.9%的A (AgCu)(InGa)Se2基太阳能电池。
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引用次数: 13
Effect of reduced Cu(InGa)(SeS)2 thickness using three-step H2Se/Ar/H2S reaction of Cu-In-Ga metal precursor 三步H2Se/Ar/H2S反应对Cu- in - ga金属前驱体Cu(InGa)(SeS)2厚度还原的影响
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656751
Kihwan Kim, Hyeonwook Park, W. Kim, G. Hanket, W. Shafarman
Cu(In,Ga)(Se,S)2 (CIGSS) absorbers with thicknesses from 1.9 to 0.25 µm have been grown using a three-step selenization/Ar-anneal/sulfization reaction ofCu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 µm and lateral compositional nonuniformity, VOC and fill factor were nearly sustained, while JSC decreased due to incomplete absorption. With the 0.25-µm-thick absorber layer, an efficiency of 9.1% (without AR coating) with VOC = 612 mV, JSC = 21.0 mA/cm2, and FF = 71.1% was obtained.
采用Cu-In-Ga金属前驱体的硒化/ ar退火/磺化三步反应,制备了厚度为1.9 ~ 0.25 μ m的Cu(In,Ga)(Se,S)2 (CIGSS)吸收体。材料表征表明,随着厚度的减小,Mo/CIGSS界面的取向、表观晶粒尺寸和空洞的形成都发生了变化。即使吸收剂厚度降低到0.25µm,且横向成分不均匀,VOC和填充系数几乎保持不变,而JSC则由于吸收不完全而降低。当吸收层厚度为0.25-µm时,效率为9.1%(无AR涂层),VOC = 612 mV, JSC = 21.0 mA/cm2, FF = 71.1%。
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引用次数: 7
PV output variability modeling using satellite imagery and neural networks 利用卫星图像和神经网络建立PV输出变异性模型
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656718
M. Reno, J. Stein
High frequency irradiance variability measured on the ground is caused by the formation, dissipation, and passage of clouds in the sky. Variability and ramp rates of PV systems are increasingly important to understand and model for grid stability as PV penetration levels rise. Using satellite imagery to identify cloud types and patterns can predict irradiance variability in areas lacking sensors. With satellite imagery covering the entire U.S., this allows for more accurate integration planning and power flow modelling over wide areas. Satellite imagery from southern Nevada was analyzed at 15 minute intervals over a year. Methods for image stabilization, cloud detection, and textural classification of clouds were developed and tested. High Performance Computing parallel processing algorithms were also investigated and tested. Artificial Neural Networks using imagery as inputs were trained on ground-based measurements of irradiance to model the variability and were tested to show some promise as a means for predicting irradiance variability. Artificial Neural Networks, cloud texture analysis, and cloud type categorization can be used to model the irradiance and variability for a location at a one minute resolution without needing many ground based irradiance sensors.
在地面上测量到的高频辐照度变化是由天空中云的形成、消散和通过引起的。随着光伏渗透水平的提高,光伏系统的可变性和斜坡率对于理解和建立电网稳定性模型越来越重要。利用卫星图像识别云的类型和模式可以预测缺乏传感器地区的辐照度变化。卫星图像覆盖了整个美国,这使得更准确的整合规划和大范围的潮流建模成为可能。在一年的时间里,每隔15分钟分析一次内华达州南部的卫星图像。开发并测试了图像稳定、云检测和云的纹理分类方法。高性能计算并行处理算法也进行了研究和测试。使用图像作为输入的人工神经网络在基于地面的辐照度测量上进行了训练,以模拟可变性,并进行了测试,显示出作为预测辐照度可变性手段的一些希望。人工神经网络、云纹理分析和云类型分类可以用来模拟一个位置的一分钟分辨率的辐照度和可变性,而不需要许多地面辐照度传感器。
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引用次数: 5
期刊
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2
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