Band structure and electron transport in multi-junction graphene nanoribbons

N. Hasegawa, R. Sako, H. Tsuchiya, M. Ogawa
{"title":"Band structure and electron transport in multi-junction graphene nanoribbons","authors":"N. Hasegawa, R. Sako, H. Tsuchiya, M. Ogawa","doi":"10.1109/SNW.2012.6243281","DOIUrl":null,"url":null,"abstract":"In this study, an electrical heterojunction consisting of multi-connected semiconducting and metallic graphene nanoribbons with armchair-edged configurations, is considered and discuss its basic properties by performing the electronic band structure calculations.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":"40 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this study, an electrical heterojunction consisting of multi-connected semiconducting and metallic graphene nanoribbons with armchair-edged configurations, is considered and discuss its basic properties by performing the electronic band structure calculations.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
多结石墨烯纳米带的能带结构和电子输运
在本研究中,考虑了由多连接的半导体和金属石墨烯纳米带组成的具有扶手椅边缘结构的电异质结,并通过进行电子能带结构计算来讨论其基本性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Statistical variability study of a 10nm gate length SOI FinFET device A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals Quantum transport property in FETs with deterministically implanted single-arsenic ions using single-ion implantation Graphene fillers for ultra-efficient thermal interface materials Reduced drain current variability in fully depleted silicon-on-thin-BOX (SOTB) MOSFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1