{"title":"Preparation and properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by electron cyclotron resonance sputtering","authors":"H. Maiwa, N. Ichinose","doi":"10.1109/ISAF.1996.602787","DOIUrl":null,"url":null,"abstract":"Thin films of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ were deposited on Pt- or Ir-coated oxidized Si substrate by electron cyclotron resonance (ECR) sputtering using ceramic targets. Crystal structure and dielectric properties of the films were investigated as functions of sputtering conditions such as substrate temperature, sputtering gas pressure and used substrate. Using a target with excess Bi content compared to stoichiometric composition was required to compensate Bi re-evaporation from the substrate and to obtain a perovskite single phase at 600/spl deg/C. (117)-oriented films exhibited ferroelectric hysteresis loops. The remanent polarization and coercive field of the Bi/sub 4/Ti/sub 3/O/sub 12/ films on Pt/SiO/sub 2//Si were 10.9 /spl mu/C/cm/sup 2/ and 139 kV/cm, respectively. Those of the films on Ir/SiO/sub 2//Si were 3.6 /spl mu/C/cm/sup 2/ and 99 kV/cm, respectively.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"9 1","pages":"455-458 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.602787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Thin films of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ were deposited on Pt- or Ir-coated oxidized Si substrate by electron cyclotron resonance (ECR) sputtering using ceramic targets. Crystal structure and dielectric properties of the films were investigated as functions of sputtering conditions such as substrate temperature, sputtering gas pressure and used substrate. Using a target with excess Bi content compared to stoichiometric composition was required to compensate Bi re-evaporation from the substrate and to obtain a perovskite single phase at 600/spl deg/C. (117)-oriented films exhibited ferroelectric hysteresis loops. The remanent polarization and coercive field of the Bi/sub 4/Ti/sub 3/O/sub 12/ films on Pt/SiO/sub 2//Si were 10.9 /spl mu/C/cm/sup 2/ and 139 kV/cm, respectively. Those of the films on Ir/SiO/sub 2//Si were 3.6 /spl mu/C/cm/sup 2/ and 99 kV/cm, respectively.
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