K. Daffé, F. Mubarak, V. Mascolo, H. Votsi, N. Ridler, G. Dambrine, I. Roch, K. Haddadi
{"title":"On-Wafer Broadband Microwave Measurement of High Impedance Devices-CPW Test Structures with Integrated Metallic Nano-Resistances","authors":"K. Daffé, F. Mubarak, V. Mascolo, H. Votsi, N. Ridler, G. Dambrine, I. Roch, K. Haddadi","doi":"10.23919/EUMC.2018.8541607","DOIUrl":null,"url":null,"abstract":"On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices are proposed. The test devices are manufactured with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100–500 $\\mu \\mathbf{S}$ associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20 GHz. The uncertainty corresponding to the post-calibration residual errors-terms is provided. In addition, a sensitivity analysis investigating technological process variability using FEM-based EM modelling is considered.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"9 1","pages":"25-28"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 48th European Microwave Conference (EuMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2018.8541607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices are proposed. The test devices are manufactured with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100–500 $\mu \mathbf{S}$ associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20 GHz. The uncertainty corresponding to the post-calibration residual errors-terms is provided. In addition, a sensitivity analysis investigating technological process variability using FEM-based EM modelling is considered.