On-Wafer Broadband Microwave Measurement of High Impedance Devices-CPW Test Structures with Integrated Metallic Nano-Resistances

K. Daffé, F. Mubarak, V. Mascolo, H. Votsi, N. Ridler, G. Dambrine, I. Roch, K. Haddadi
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引用次数: 2

Abstract

On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices are proposed. The test devices are manufactured with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100–500 $\mu \mathbf{S}$ associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20 GHz. The uncertainty corresponding to the post-calibration residual errors-terms is provided. In addition, a sensitivity analysis investigating technological process variability using FEM-based EM modelling is considered.
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高阻抗器件的片上宽带微波测量-集成金属纳米电阻的cpw测试结构
提出了双端口共面波导(CPW)高阻抗纳米器件的片上微波特性和不确定度评定。测试装置是用集成在锥形CPW结构中的阻性金属纳米膜制造的。在100-500 $\mu \mathbf{S}$范围内,与数百aF数量级的并联电容相关的微波电导示例性显示高达20 GHz。给出了标定后剩余误差项的不确定度。此外,还考虑了利用基于有限元的电磁模型对工艺过程变异性进行敏感性分析。
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