Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541724
Junhyung Jeong, P. Kim, Phanam Pech, Y. Jeong, Sangmin Lee
In this paper, the quasi-monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) with silicon integrated passive device (IPD) matching network is proposed. The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs. Moreover, the manufacturing cost can be reduced due to the silicon substrate process. For experimental validation, the proposed quasi-MMIC HPA was designed and fabricated at the 8.5 GHz for radar application. The measurement results shows that the output power and drain efficiency at saturation point are 48.5 dBm (70.8W) and 45.5%, respectively, with pulse signal test (100 usec pulse width and 10%duty.
{"title":"Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network","authors":"Junhyung Jeong, P. Kim, Phanam Pech, Y. Jeong, Sangmin Lee","doi":"10.23919/EUMC.2018.8541724","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541724","url":null,"abstract":"In this paper, the quasi-monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) with silicon integrated passive device (IPD) matching network is proposed. The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs. Moreover, the manufacturing cost can be reduced due to the silicon substrate process. For experimental validation, the proposed quasi-MMIC HPA was designed and fabricated at the 8.5 GHz for radar application. The measurement results shows that the output power and drain efficiency at saturation point are 48.5 dBm (70.8W) and 45.5%, respectively, with pulse signal test (100 usec pulse width and 10%duty.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"62 1","pages":"340-343"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73820237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EURAD.2018.8546658
H. Kaouach, M. A. Belaid
This paper describes the design and demonstration of planar transmit-arrays operating in X-band with 1-bit phase quantization and based on wideband high efficiency unit cells. The unit cell consists of two identical square patch antennas loaded by C-loop slots and interconnected in their centers by a metalized via hole. The proposed transmit-array achieves a maximum directivity of 25.1 dBi and a gain of 22.8 dBi. Radiation efficiency of 56.3% is also obtained with a 1-dB gain bandwidth of up to 9.2% around 9.85 GHz and very low cross-polarization levels. The beam-steering up to 30° is achieved by tilting the focal source.
{"title":"Design and Demonstration of Linearly-Polarized Transmit-Arrays in X-Band","authors":"H. Kaouach, M. A. Belaid","doi":"10.23919/EURAD.2018.8546658","DOIUrl":"https://doi.org/10.23919/EURAD.2018.8546658","url":null,"abstract":"This paper describes the design and demonstration of planar transmit-arrays operating in X-band with 1-bit phase quantization and based on wideband high efficiency unit cells. The unit cell consists of two identical square patch antennas loaded by C-loop slots and interconnected in their centers by a metalized via hole. The proposed transmit-array achieves a maximum directivity of 25.1 dBi and a gain of 22.8 dBi. Radiation efficiency of 56.3% is also obtained with a 1-dB gain bandwidth of up to 9.2% around 9.85 GHz and very low cross-polarization levels. The beam-steering up to 30° is achieved by tilting the focal source.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"42 1","pages":"1529-1532"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74130358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541390
R. Graglia, A. Peterson, P. Petrini
The Method of Moments (MoM) is an efficient way of obtaining solutions of integral equations for 2D and 3D electromagnetic structures by subdividing them into simple shapes such as triangles and rectangles and using suitable polynomial basis functions to describe fields or currents. In the presence of sharp edges and corners, the currents may be unbounded and the accuracy of the solution may be poor due to the inappropriate model provided by a polynomial basis. Attempts to improve the accuracy by increasing the number of cells or the polynomial order of the basis functions may fail as a result. In this paper new basis functions are proposed with unbounded behavior, to more efficiently model edge and corner singularities for quadrilateral cells.
{"title":"Singular Edge and Corner Basis Functions for Scattering from Conducting Plates","authors":"R. Graglia, A. Peterson, P. Petrini","doi":"10.23919/EUMC.2018.8541390","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541390","url":null,"abstract":"The Method of Moments (MoM) is an efficient way of obtaining solutions of integral equations for 2D and 3D electromagnetic structures by subdividing them into simple shapes such as triangles and rectangles and using suitable polynomial basis functions to describe fields or currents. In the presence of sharp edges and corners, the currents may be unbounded and the accuracy of the solution may be poor due to the inappropriate model provided by a polynomial basis. Attempts to improve the accuracy by increasing the number of cells or the polynomial order of the basis functions may fail as a result. In this paper new basis functions are proposed with unbounded behavior, to more efficiently model edge and corner singularities for quadrilateral cells.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"74 1","pages":"1182-1185"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74152940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541568
J. Byford, Christopher Oakley, P. Chahal
Two different additive manufacturing methods are employed to pattern a curved plastic surface with a frequency selective structure (FSS). Here, a dielectric lens is used as a proof of concept for a curved surface and the FSS is a bandstop filter designed to operate near 150 GHz. An aerosol jet printing process is used to directly print the FSS onto a planar surface and a lens structure. Additionally, a patterned FSS is demonstrated by printing the test structures with the pattern pre-inset into the dielectric, sputtering them with copper, and then selectively removing the copper from the unpatterned area. This procedure is also known as a damascene-like process. Structures are printed using a Formlabs Form 2 printer, which uses a stereolithography (SLA) technology, and a clear colored high temperature curing resin as the build material. Simulations are performed using ANSYS HFSS and measurements were taken using an Emcore frequency domain THz system.
采用两种不同的增材制造方法对具有频率选择结构(FSS)的弯曲塑料表面进行了制模。在这里，一个介质透镜被用作曲面的概念验证，FSS是一个设计工作在150 GHz附近的带阻滤波器。采用气溶胶喷射打印工艺将FSS直接打印到平面和透镜结构上。此外，通过将预先嵌入图案的测试结构打印到电介质中，用铜溅射它们，然后从未图案区域选择性地去除铜，演示了图图化FSS。这个过程也被称为大马士革式过程。结构使用Formlabs Form 2打印机打印，该打印机使用立体光刻(SLA)技术，并使用透明的彩色高温固化树脂作为构建材料。利用ANSYS HFSS进行了仿真，并利用Emcore频域太赫兹系统进行了测量。
{"title":"Additively Manufactured Frequency Selective Structures on Curved Surfaces","authors":"J. Byford, Christopher Oakley, P. Chahal","doi":"10.23919/EUMC.2018.8541568","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541568","url":null,"abstract":"Two different additive manufacturing methods are employed to pattern a curved plastic surface with a frequency selective structure (FSS). Here, a dielectric lens is used as a proof of concept for a curved surface and the FSS is a bandstop filter designed to operate near 150 GHz. An aerosol jet printing process is used to directly print the FSS onto a planar surface and a lens structure. Additionally, a patterned FSS is demonstrated by printing the test structures with the pattern pre-inset into the dielectric, sputtering them with copper, and then selectively removing the copper from the unpatterned area. This procedure is also known as a damascene-like process. Structures are printed using a Formlabs Form 2 printer, which uses a stereolithography (SLA) technology, and a clear colored high temperature curing resin as the build material. Simulations are performed using ANSYS HFSS and measurements were taken using an Emcore frequency domain THz system.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"45 1","pages":"671-674"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75263972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541525
M. Aldrigo, M. Dragoman, S. Iordanescu, M. Modreanu, I. Povey, D. Vasilache, A. Dinescu, M. Shanawani, D. Masotti
In this paper, we present a millimetre wave harvester consisting of a bow-tie antenna integrated with a hafnium dioxide (HfO2)-based metal-insulator-metal (MIM) diode, capable to rectify the incoming electromagnetic radiation in the V band (i.e. 40–75 GHz). We reduced significantly the diode resistance, thus improving antenna-diode matching, which is a major issue when using a MIM diode with a differential resistance in the order of hundreds or thousands of $mathrm{k}Omega$. In detail, we designed, fabricated and tested on a standard 4-inch silicon wafer a 61.6-GHz rectenna in which the vertical Au-HfO2-Pt MIM structure is integrated between antenna arms. The 6-nm-thick HfO2 single-layer guarantees a much higher DC current density of almost $mathbf{3}times mathbf{10}^{mathbf{4}}mathbf{A}/mathbf{cm}^{2}$, in comparison with state-of-the-art single-layer MIM diodes. This way, the proposed rectenna efficiently harvests up to $mathbf{250} mu mathbf{V}$ with −20 dBm of incoming power, with a promising voltage responsivity of over 5 V/W. The results are very encouraging for their practical exploitation in future low-power solutions for energetically-autonomous 5G terminal equipment.
在本文中，我们提出了一种毫米波收割机，该收割机由领结天线与二氧化铪(HfO2)基金属-绝缘体-金属(MIM)二极管集成组成，能够整流V波段(即40-75 GHz)的入射电磁辐射。我们显着降低了二极管电阻，从而改善了天线二极管匹配，这是使用具有数百或数千$mathrm{k}Omega$量级差分电阻的MIM二极管时的主要问题。详细地说，我们在标准的4英寸硅片上设计、制造并测试了一个61.6 ghz的天线，其中在天线臂之间集成了垂直Au-HfO2-Pt MIM结构。与最先进的单层MIM二极管相比，6纳米厚的HfO2单层保证了更高的直流电流密度，几乎达到$mathbf{3}times mathbf{10}^{mathbf{4}}mathbf{A}/mathbf{cm}^{2}$。通过这种方式，所提出的整流天线在−20 dBm的输入功率下有效地收集到$mathbf{250} mu mathbf{V}$，具有超过5 V/W的有希望的电压响应性。这一结果非常鼓舞人心，因为它们将在未来的低功耗解决方案中用于自主5G终端设备的实际开发。
{"title":"Bow-Tie Antenna Integrated with an HfO2-Based MIM Diode for Millimetre Wave Harvesting","authors":"M. Aldrigo, M. Dragoman, S. Iordanescu, M. Modreanu, I. Povey, D. Vasilache, A. Dinescu, M. Shanawani, D. Masotti","doi":"10.23919/EUMC.2018.8541525","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541525","url":null,"abstract":"In this paper, we present a millimetre wave harvester consisting of a bow-tie antenna integrated with a hafnium dioxide (HfO2)-based metal-insulator-metal (MIM) diode, capable to rectify the incoming electromagnetic radiation in the V band (i.e. 40–75 GHz). We reduced significantly the diode resistance, thus improving antenna-diode matching, which is a major issue when using a MIM diode with a differential resistance in the order of hundreds or thousands of $mathrm{k}Omega$. In detail, we designed, fabricated and tested on a standard 4-inch silicon wafer a 61.6-GHz rectenna in which the vertical Au-HfO2-Pt MIM structure is integrated between antenna arms. The 6-nm-thick HfO2 single-layer guarantees a much higher DC current density of almost $mathbf{3}times mathbf{10}^{mathbf{4}}mathbf{A}/mathbf{cm}^{2}$, in comparison with state-of-the-art single-layer MIM diodes. This way, the proposed rectenna efficiently harvests up to $mathbf{250} mu mathbf{V}$ with −20 dBm of incoming power, with a promising voltage responsivity of over 5 V/W. The results are very encouraging for their practical exploitation in future low-power solutions for energetically-autonomous 5G terminal equipment.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"44 1","pages":"769-772"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75882069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541573
Ali Dia, C. Durousseau, C. Menudier, L. Carpentier, O. Ruatta, S. Bila
A shape optimization technique is proposed for the optimal design of microwave components and circuits. The technique couples a gradient descent method with a Bézier curve parametrization. It is applied to the boundary of cylindrical posts placed in metallic cavities of a two-pole microwave filter. The first objective is to demonstrate the efficiency of the method for attaining an ideal transfer function using a small set of design variables.
{"title":"Gradient Descent Shape Optimization of Microwave Circuits using Bézier Curves Parametrization","authors":"Ali Dia, C. Durousseau, C. Menudier, L. Carpentier, O. Ruatta, S. Bila","doi":"10.23919/EUMC.2018.8541573","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541573","url":null,"abstract":"A shape optimization technique is proposed for the optimal design of microwave components and circuits. The technique couples a gradient descent method with a Bézier curve parametrization. It is applied to the boundary of cylindrical posts placed in metallic cavities of a two-pole microwave filter. The first objective is to demonstrate the efficiency of the method for attaining an ideal transfer function using a small set of design variables.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"22 1","pages":"158-161"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74456167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541733
Ayaka Shimizu, T. Ishizaki
Recently, miniaturization and high performance of base-station filters are strongly requested. By forming attenuation poles near the passband, attenuation outside the passband can be improved. As a result, the filter can be downsized due to a smaller number of resonators. In this report, a novel half-wavelength coupled-resonator filter is investigated. Although conventional filter makes attenuation poles by cross-coupling, this filter can generate those by using electromagnetic coupling between resonators. The design method for half-wavelength filter is investigated. It is demonstrated how the attenuation pole frequencies varied depending on capacitances connected to the coupled-resonators. In addition, the spurious characteristics are also studied. The second harmonic spurious of half-wavelength resonator can be moved to higher frequency by loading capacitances at both ends of the coupled-line.
{"title":"A Novel Half-Wavelength Coupled-Resonator Filter with Multiple Attenuation Poles","authors":"Ayaka Shimizu, T. Ishizaki","doi":"10.23919/EUMC.2018.8541733","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541733","url":null,"abstract":"Recently, miniaturization and high performance of base-station filters are strongly requested. By forming attenuation poles near the passband, attenuation outside the passband can be improved. As a result, the filter can be downsized due to a smaller number of resonators. In this report, a novel half-wavelength coupled-resonator filter is investigated. Although conventional filter makes attenuation poles by cross-coupling, this filter can generate those by using electromagnetic coupling between resonators. The design method for half-wavelength filter is investigated. It is demonstrated how the attenuation pole frequencies varied depending on capacitances connected to the coupled-resonators. In addition, the spurious characteristics are also studied. The second harmonic spurious of half-wavelength resonator can be moved to higher frequency by loading capacitances at both ends of the coupled-line.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"90 1","pages":"958-961"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75200344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541583
Á. Morales, I. Monroy
This work presents the design of a $mathbf{1x4}$ optical true time delay beamforming network integrated into a Si3N4photonic chip for hybrid millimeter wave/photonic systems. The spectral periodicity of a ring resonator-based tree structure is exploited to provide simultaneously the same delay configuration to different gigabit optical channels, increasing the effective beamforming bandwidth. The free spectral range is fixed to 33.3 GHz to assure the combability with wavelength division multiplexing applications. The simulation results show that the progressive delay between outputs can be continuously tuned from 0 ps to 20 ps. These values assure the operation at 60 GHz band.
{"title":"Silicon Nitride Integrated Optical Beamforming Network for Millimeter Wave Photonics Systems","authors":"Á. Morales, I. Monroy","doi":"10.23919/EUMC.2018.8541583","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541583","url":null,"abstract":"This work presents the design of a $mathbf{1x4}$ optical true time delay beamforming network integrated into a Si3N4photonic chip for hybrid millimeter wave/photonic systems. The spectral periodicity of a ring resonator-based tree structure is exploited to provide simultaneously the same delay configuration to different gigabit optical channels, increasing the effective beamforming bandwidth. The free spectral range is fixed to 33.3 GHz to assure the combability with wavelength division multiplexing applications. The simulation results show that the progressive delay between outputs can be continuously tuned from 0 ps to 20 ps. These values assure the operation at 60 GHz band.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"14 1","pages":"785-788"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75317749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EURAD.2018.8546631
Sassan Schäfer, A. Diewald, Daniel Schmiech, Simon Müller
The authors present an antenna feeding network and an antenna array dedicated observation of elderly people in their home with a 24 GHz digital beamforming radar system (DBF). The feeding network is a parallel-feed power divider for microstrip patch antennas at 24 G Hz. In this paper the network specification and the development is explained. Finally simulations and measurements are compared to each other.
{"title":"Parallel Fed Patch Array for Microwave-based Vital Sign Monitoring of Elderly People","authors":"Sassan Schäfer, A. Diewald, Daniel Schmiech, Simon Müller","doi":"10.23919/EURAD.2018.8546631","DOIUrl":"https://doi.org/10.23919/EURAD.2018.8546631","url":null,"abstract":"The authors present an antenna feeding network and an antenna array dedicated observation of elderly people in their home with a 24 GHz digital beamforming radar system (DBF). The feeding network is a parallel-feed power divider for microstrip patch antennas at 24 G Hz. In this paper the network specification and the development is explained. Finally simulations and measurements are compared to each other.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"15 1","pages":"1561-1564"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74269812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.23919/EUMC.2018.8541509
Isam Alawnch, J. Barowski, I. Rolfes
This work describes the use of millimetre wave technology to extract the dielectric constants of different types of dielectric materials. The extraction of the dielectric materials is based on measurements (i.e., monostatic measurements) of the reflection coefficient for various dielectricmaterials. The measurements are done by utilizing a frequency modulated continuous wave radar with a dielectric lens antenna. The investigated materials are broadly utilized as a part of our everyday life. The fundamental dielectric materials outcomes are done for the following accompanying materials: Polytetrafluoroethylene (PTFE), mainly Teflon, nylon, and. The measurements are done in the frequency range from 207 GHz to 247 GHz.
{"title":"Extraction of Relative Permittivity from Measured Reflection Coefficient of Dielectric Materials in the Frequency Range 207 – 247 GHz","authors":"Isam Alawnch, J. Barowski, I. Rolfes","doi":"10.23919/EUMC.2018.8541509","DOIUrl":"https://doi.org/10.23919/EUMC.2018.8541509","url":null,"abstract":"This work describes the use of millimetre wave technology to extract the dielectric constants of different types of dielectric materials. The extraction of the dielectric materials is based on measurements (i.e., monostatic measurements) of the reflection coefficient for various dielectricmaterials. The measurements are done by utilizing a frequency modulated continuous wave radar with a dielectric lens antenna. The investigated materials are broadly utilized as a part of our everyday life. The fundamental dielectric materials outcomes are done for the following accompanying materials: Polytetrafluoroethylene (PTFE), mainly Teflon, nylon, and. The measurements are done in the frequency range from 207 GHz to 247 GHz.","PeriodicalId":6472,"journal":{"name":"2018 48th European Microwave Conference (EuMC)","volume":"34 1","pages":"576-579"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78436616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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