T. Herrmann, A. Zaka, N. Subramani, Zhixing Zhao, S. Lehmann, Y. Andee
{"title":"RF performance improvement on 22FDX® platform and beyond","authors":"T. Herrmann, A. Zaka, N. Subramani, Zhixing Zhao, S. Lehmann, Y. Andee","doi":"10.1109/SISPAD.2019.8870435","DOIUrl":null,"url":null,"abstract":"The paper describes manufacturing process and layout optimizations to improve RF performance of 22FDX® N/PFET devices, based on a comprehensive calibration of DC and RF figures of merit. Process and Device simulations of the individual and combined elements show ft/fmax improvement up to about 1.13/1.1x (NFET) and about 1.32/1.24x (PFET) over standard devices mainly driven by mechanical stress and parasitic R/C elements.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The paper describes manufacturing process and layout optimizations to improve RF performance of 22FDX® N/PFET devices, based on a comprehensive calibration of DC and RF figures of merit. Process and Device simulations of the individual and combined elements show ft/fmax improvement up to about 1.13/1.1x (NFET) and about 1.32/1.24x (PFET) over standard devices mainly driven by mechanical stress and parasitic R/C elements.
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