A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609379

M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, Hiroshi Kano

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引用次数: 774

Abstract

A novel nonvolatile memory utilizing spin torque transfer magnetization switching (STS), abbreviated spin-RAM hereafter, is presented for the first time. The spin-RAM is programmed by magnetization reversal through an interaction of a spin momentum-torque-transferred current and a magnetic moment of memory layers in magnetic tunnel junctions (MTJs), and therefore an external magnetic field is unnecessary as that for a conventional MRAM. This new programming mode has been accomplished owing to our tailored MTJ, which has an oval shape of 100 times 150 nm. The memory cell is based on a 1-transistor and a 1-MTJ (ITU) structure. The 4kbit spin-RAM was fabricated on a 4 level metal, 0.18 mum CMOS process. In this work, writing speed as high as 2 ns, and a write current as low as 200 muA were successfully demonstrated. It has been proved that spin-RAM possesses outstanding characteristics such as high speed, low power and high scalability for the next generation universal memory

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一种具有自旋转矩传递磁化开关的新型非易失性存储器:自旋ram

首次提出了一种利用自旋转矩传递磁化开关(STS)的新型非易失性存储器，以下简称自旋ram。自旋ram是通过磁隧道结(MTJs)中自旋动量-转矩传递电流和存储层磁矩的相互作用进行磁化反转编程的，因此不需要像传统MRAM那样需要外部磁场。这种新的编程模式是由我们量身定制的MTJ实现的，该MTJ具有100 × 150纳米的椭圆形。存储单元基于1晶体管和1 mtj (ITU)结构。采用4级金属0.18 μ m CMOS工艺制备了4kbit自旋ram。在这项工作中，成功地证明了高达2 ns的写入速度和低至200 muA的写入电流。事实证明，自旋ram具有高速、低功耗和高可扩展性等特点，是下一代通用存储器的重要组成部分

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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