{"title":"Analysis of hot-carrier-induced degradation in MOSFETs by gate-to-drain and gate-to-substrate capacitance measurements","authors":"C.T. Hsu, M. Lau, Y. Yeow, Z. Yao","doi":"10.1109/RELPHY.2000.843897","DOIUrl":null,"url":null,"abstract":"In this paper we describe and demonstrate the use of gate-to-drain capacitance (C/sub gd/) measurements at cryogenic temperature as a tool to characterize hot-carrier-induced charge centers. Also a new method based on gate-to-substrate capacitance (C/sub gb/), validated by means of two-dimensional numerical simulation, is proposed to extract the spatial distribution of oxide interface charges with reasonable accuracy.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2000.843897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper we describe and demonstrate the use of gate-to-drain capacitance (C/sub gd/) measurements at cryogenic temperature as a tool to characterize hot-carrier-induced charge centers. Also a new method based on gate-to-substrate capacitance (C/sub gb/), validated by means of two-dimensional numerical simulation, is proposed to extract the spatial distribution of oxide interface charges with reasonable accuracy.
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