K. Muthuseenu, E. C. Hylin, H. Barnaby, P. Apsangi, M. Kozicki, G. Schlenvogt, Mark A. Townsend
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引用次数: 0
Abstract
A model for Ag-GeSe3-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.
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