N. Harabech, R. Bouchakour, P. Canet, P. Pannier, J. Sorbier
{"title":"Extraction of Fowler-Nordheim parameters of thin SiO/sub 2/ oxide film including polysilicon gate depletion: validation with an EEPROM memory cell","authors":"N. Harabech, R. Bouchakour, P. Canet, P. Pannier, J. Sorbier","doi":"10.1109/ISCAS.2000.856359","DOIUrl":null,"url":null,"abstract":"The simulation of EEPROM memory characteristics is fundamental to the design and optimization of low-power non-volatile memory products. This paper presents a new method for extraction of Fowler-Nordheim parameters in a thin (polysilicon-gate) SiO/sub 2/ oxide. It consists of extraction of the oxide thickness from MOS capacitance characteristics including polysilicon-gate depletion. Then, we use the oxide thickness to estimate the electric field for the extraction of the FN current parameters.","PeriodicalId":6422,"journal":{"name":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2000.856359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
The simulation of EEPROM memory characteristics is fundamental to the design and optimization of low-power non-volatile memory products. This paper presents a new method for extraction of Fowler-Nordheim parameters in a thin (polysilicon-gate) SiO/sub 2/ oxide. It consists of extraction of the oxide thickness from MOS capacitance characteristics including polysilicon-gate depletion. Then, we use the oxide thickness to estimate the electric field for the extraction of the FN current parameters.
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