Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst

S. Vollebregt, H. Schellevis, K. Beenakker, R. Ishihara
{"title":"Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst","authors":"S. Vollebregt, H. Schellevis, K. Beenakker, R. Ishihara","doi":"10.1109/IITC.2013.6615602","DOIUrl":null,"url":null,"abstract":"Vertically aligned carbon nanotubes (CNT) were fabricated using a novel CoAlcatalyst at substrate temperatures as low as 350°C and analysed using Raman spectroscopy. Electrical measurement structures were fabricated and characterized using CNT bundles grown at 400°C. The resulting I-V characteristics display a slight non-linearity, likely due to a nonoptimal top contact. The first measurement results indicate CoAl can be an attractive candidate for back-end integration of CNT.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"77 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Vertically aligned carbon nanotubes (CNT) were fabricated using a novel CoAlcatalyst at substrate temperatures as low as 350°C and analysed using Raman spectroscopy. Electrical measurement structures were fabricated and characterized using CNT bundles grown at 400°C. The resulting I-V characteristics display a slight non-linearity, likely due to a nonoptimal top contact. The first measurement results indicate CoAl can be an attractive candidate for back-end integration of CNT.
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采用新型煤催化剂在线后相容温度下制备碳纳米管通孔
在低至350°C的衬底温度下,使用新型的煤催化剂制备了垂直排列的碳纳米管(CNT),并使用拉曼光谱对其进行了分析。使用在400°C下生长的碳纳米管束制备和表征了电测量结构。由此产生的I-V特性显示出轻微的非线性,可能是由于非最佳顶部接触。第一个测量结果表明,煤可以作为碳纳米管后端集成的一个有吸引力的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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