Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs

Jaehee Choi, U. Monga, Yonghee Park, H. Shim, U. Kwon, S. Pae, D. Kim
{"title":"Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs","authors":"Jaehee Choi, U. Monga, Yonghee Park, H. Shim, U. Kwon, S. Pae, D. Kim","doi":"10.1109/SISPAD.2019.8870479","DOIUrl":null,"url":null,"abstract":"This paper investigates the impact of BEOL design on device and backend reliability – HCI, BTI, EM – due to dependence of self-heating on BEOL in highly-scaled FinFETs. Our analysis indicates that due to poor thermal coupling to substrate – in the thin fin body devices – a large part of heat flows out of BEOL. This makes self-heating, and thus device (FEOL) temperature, very sensitive to BEOL design. The heat flow through BEOL also significantly increases the metal and via temperatures. The increased temperature negatively affects the overall reliability, and one of the ways to mitigate device degradation is optimization of BEOL design.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper investigates the impact of BEOL design on device and backend reliability – HCI, BTI, EM – due to dependence of self-heating on BEOL in highly-scaled FinFETs. Our analysis indicates that due to poor thermal coupling to substrate – in the thin fin body devices – a large part of heat flows out of BEOL. This makes self-heating, and thus device (FEOL) temperature, very sensitive to BEOL design. The heat flow through BEOL also significantly increases the metal and via temperatures. The increased temperature negatively affects the overall reliability, and one of the ways to mitigate device degradation is optimization of BEOL design.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
BEOL设计对大尺度finfet自热及可靠性的影响
本文研究了BEOL设计对器件和后端可靠性(HCI, BTI, EM)的影响,因为BEOL依赖于高尺寸finfet的自热。我们的分析表明,由于薄鳍体器件与衬底的热耦合不良,很大一部分热量从BEOL流出。这使得自热和器件(FEOL)温度对BEOL设计非常敏感。通过BEOL的热流也显著提高了金属和管道的温度。温度升高会对整体可靠性产生负面影响,而优化BEOL设计是缓解器件退化的方法之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of Stacking Faults on the Thermoelectric Figure of Merit of Si Nanowires Effect of Trap on Carrier Transport in InAs FET with Al2 O3 Oxide: DFT-based NEGF simulations Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide Quantum Transport Simulations of the Zero Temperature Coefficient in Gate-all-around Nanowire pFETs Electronic and structural properties of interstitial titanium in crystalline silicon from first-principles simulations
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1