E. González-Marín, F. Ruiz, A. Godoy, I. M. Tienda-Luna, F. Gámiz
{"title":"Effect of interfacial states on the technological variability of trigate MOSFETs","authors":"E. González-Marín, F. Ruiz, A. Godoy, I. M. Tienda-Luna, F. Gámiz","doi":"10.1109/SNW.2012.6243295","DOIUrl":null,"url":null,"abstract":"This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (VT) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the effects of interfacial states (Dit). Different Dit(E) profiles have been considered, analyzing their influence for several device geometries.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (VT) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the effects of interfacial states (Dit). Different Dit(E) profiles have been considered, analyzing their influence for several device geometries.
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