Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency

Abstract

We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned spin-Hall structure, the cell has the critical switching current (Ic) of 200 μA at 20 nsec for an MTJ size of 50×150 nm 2 . The value is comparable to that for matured STT-MRAM with the similar dimension. By applying a voltage to the MTJ, Ic was modulated due to the voltage-controlled magnetic anisotropy (VCMA) effect and the Ic reduction was 50 μA at -0.8 V. It is concluded that using both the spin Hall effect and the VCMA effect, the VoCSM has a potential of high write-efficiency.