{"title":"Correlation between improved stability and microstructural properties of a-Si:H and a-Ge:H","authors":"T. Haage, S. Bauer, B. Schroder, H. Oechsner","doi":"10.1109/WCPEC.1994.519990","DOIUrl":null,"url":null,"abstract":"In this paper we report on comparative investigations concerning the stability of glow discharge and hot wire deposited a-Si:H films. Using spectroscopic ellipsometry measurements and a data interpretation based on a tetrahedron model we investigated the microstructural properties of the films. We found that the stability of a-Si:H films is significantly increased by a deposition process guided in a way that high quality material can be grown with high density and low hydrogen content. The a-Si:H results are confirmed by similar results obtained on sp-a-Ge:H. For the first time we have shown that metastability is not connected with the existence of surface like (SiH/sub 2/, (SiH)/sub x/) hydrogen bonding configurations.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.519990","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper we report on comparative investigations concerning the stability of glow discharge and hot wire deposited a-Si:H films. Using spectroscopic ellipsometry measurements and a data interpretation based on a tetrahedron model we investigated the microstructural properties of the films. We found that the stability of a-Si:H films is significantly increased by a deposition process guided in a way that high quality material can be grown with high density and low hydrogen content. The a-Si:H results are confirmed by similar results obtained on sp-a-Ge:H. For the first time we have shown that metastability is not connected with the existence of surface like (SiH/sub 2/, (SiH)/sub x/) hydrogen bonding configurations.
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