Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers
{"title":"Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers","authors":"A. Kobayashi, Tsukasa Tokutomi, K. Takeuchi","doi":"10.1109/VLSIC.2016.7573505","DOIUrl":null,"url":null,"abstract":"Versatile Triple-Level-Cell (TLC) NAND flash memory control with Read Hot/Cold Migration, Read Voltage Control and Edge Word Line Protection is proposed for data center application SSDs. Measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times.","PeriodicalId":6512,"journal":{"name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","volume":"27 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2016.7573505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
Versatile Triple-Level-Cell (TLC) NAND flash memory control with Read Hot/Cold Migration, Read Voltage Control and Edge Word Line Protection is proposed for data center application SSDs. Measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times.
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