Shih-Wei Wang, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Chia-Hsien Lin, Hsuan-Hsu Chen, Po-Hsieh Lin, Chih-Hsuan Tai, C. Pai
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引用次数: 1
Abstract
In this work, a qualitative comparison study of analog performance of junction and junctionless poly-Si TFTs is carefully investigated. According to numerical simulations, we find out that both gm and gD of junction poly-Si TFT are higher than the junctionless poly-Si TFT at a fixed IDS. Based on the same S/D doping concentration the junctionless poly-Si TFT can have a better short-channel behavior than its counterpart. Thus, it can be proved that a junctionless poly-Si TFT is a good option for AMLCD and AMOLED Applications.
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