T. Kouno, I.T. Suzuki, S. Otsuka, T. Hosoda, I. Nakamura, I. Mizushima, M. Shiozu, H. Matsuyama, K. Shono, H. Watatani, Y. Ohkura, M. Sato, S. Fukuyama, M. Miyajima
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引用次数: 8
Abstract
Stress-induced voiding under vias connected to "narrow" Copper (Cu) lines (SIV-N) was observed, for the first time, using newly prepared test structures which consisted of isolated vias between narrow (0.14 mum-wide) and very long (200 mum-long) 2-level Cu wires. Mechanism of SIV-N is different from that of well-known stress-induced voiding under vias connected to "wide" Cu lines (SIV-W), because SIV-N cannot occur during actual time according to the model that explains SIV-W. In addition, we found the effect of plasma pretreatment of cap dielectrics and cap dielectrics themselves on SIV-N and the other reliability issues, and succeeded in obtaining the condition which satisfied SIV-N, SIV-W and EM
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