H. Kamitake, K. Ohara, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, Y. Uraoka
{"title":"Nanodot-type floating gate memory with high-density nanodot array formed utilizing Listeria Dps","authors":"H. Kamitake, K. Ohara, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, Y. Uraoka","doi":"10.1109/SNW.2012.6243352","DOIUrl":null,"url":null,"abstract":"We formed a high-density two-dimensional nanodot array by utilizing Ti-binding Dps (TD) which is a Listeria Dps with Ti-binding peptides. A high-density nanodot array over 1012 cm-2 was formed on a SiO2 at low temperature by specific adsorption of TD. The hysteresis of the MOS capacitor with nanodot array formed utilizing TD was larger than that of the MOS capacitor fabricated utilizing ferritin. This research contributes to realizing future memory devices.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We formed a high-density two-dimensional nanodot array by utilizing Ti-binding Dps (TD) which is a Listeria Dps with Ti-binding peptides. A high-density nanodot array over 1012 cm-2 was formed on a SiO2 at low temperature by specific adsorption of TD. The hysteresis of the MOS capacitor with nanodot array formed utilizing TD was larger than that of the MOS capacitor fabricated utilizing ferritin. This research contributes to realizing future memory devices.
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