R. Hegde, D. Triyoso, P. Tobin, S. Kalpat, M. Ramón, H. Tseng, J. Schaeffer, E. Luckowski, W. Taylor, C. Capasso, D. Gilmer, M. Moosa, A. Haggag, M. Raymond, D. Roan, J. Nguyen, L. La, E. Hebert, R. Cotton, X. Wang, S. Zollner, R. Gregory, D. Werho, R. Rai, L. Fonseca, M. Stoker, C. Tracy, B.W. Chan, Y. Chiu, B. White
{"title":"Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability","authors":"R. Hegde, D. Triyoso, P. Tobin, S. Kalpat, M. Ramón, H. Tseng, J. Schaeffer, E. Luckowski, W. Taylor, C. Capasso, D. Gilmer, M. Moosa, A. Haggag, M. Raymond, D. Roan, J. Nguyen, L. La, E. Hebert, R. Cotton, X. Wang, S. Zollner, R. Gregory, D. Werho, R. Rai, L. Fonseca, M. Stoker, C. Tracy, B.W. Chan, Y. Chiu, B. White","doi":"10.1109/IEDM.2005.1609259","DOIUrl":null,"url":null,"abstract":"For the first time we report on the development of a novel hafnium zirconate (HfZrO<sub>x</sub>) gate dielectric with a Ta<sub>x</sub>C<sub>y</sub> metal gate. Compared to HfO<sub>2</sub>, the new HfZrO<sub>x</sub> gate dielectric showed: (1) higher transconductance, (2) less charge trapping, (3) higher drive current, (4) lower NMOS V<sub>t</sub>, (5) reduced C-V hysteresis, (6) lower interface state density, (7) superior wafer-level thickness uniformity, and (8) longer PBTI lifetime. We attribute these improvements to a microstructure that is modified by addition of Zr to HfO<sub>2</sub>","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"78 1","pages":"35-38"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
For the first time we report on the development of a novel hafnium zirconate (HfZrOx) gate dielectric with a TaxCy metal gate. Compared to HfO2, the new HfZrOx gate dielectric showed: (1) higher transconductance, (2) less charge trapping, (3) higher drive current, (4) lower NMOS Vt, (5) reduced C-V hysteresis, (6) lower interface state density, (7) superior wafer-level thickness uniformity, and (8) longer PBTI lifetime. We attribute these improvements to a microstructure that is modified by addition of Zr to HfO2
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
