{"title":"High-level TCAD task representation and automation","authors":"C. Pichler, R. Plasun, R. Strasser, S. Selberherr","doi":"10.1109/TCAD.1996.6449162","DOIUrl":null,"url":null,"abstract":"With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable simulation environment for VLSI technology analysis, focusing on high-level tasks including response surface modeling (RSM) and optimization. Based on process and device simulation capabilities with heterogeneous simulation tools, split-lot experiments can be defined for fabrication process flows and simulation sequences. The parallel and distributed execution of independent split tree branches allow a fast computation of large-scale experiments. A persistent run data base keeps all simulation results and prevents unnecessary re-computations. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. the combination of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language for TCAD applications results in a powerful tool for tcad integration, development, and production use.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"56 1","pages":"1-30"},"PeriodicalIF":0.0000,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Technology Computer Aided Design TCAD","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TCAD.1996.6449162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable simulation environment for VLSI technology analysis, focusing on high-level tasks including response surface modeling (RSM) and optimization. Based on process and device simulation capabilities with heterogeneous simulation tools, split-lot experiments can be defined for fabrication process flows and simulation sequences. The parallel and distributed execution of independent split tree branches allow a fast computation of large-scale experiments. A persistent run data base keeps all simulation results and prevents unnecessary re-computations. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. the combination of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language for TCAD applications results in a powerful tool for tcad integration, development, and production use.