G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell
{"title":"A computationally efficient ion implantation damage model and its application to multiple implant simulations","authors":"G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell","doi":"10.1109/SISPAD.1997.621399","DOIUrl":null,"url":null,"abstract":"A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF2 and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"54 1","pages":"1-40"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Technology Computer Aided Design TCAD","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1997.621399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF2 and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.
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