Pub Date : 1997-09-08DOI: 10.1109/SISPAD.1997.621357
C. Machala, R. Wise, D. Mercer, A. Chatterjee
This paper presents the results of an experiment that examines the effects of standard channel formation process steps on boron channel profiles. The experiment is specifically designed to determine the role of various processing steps on reverse short channel effect (RSCE). In the experiment defect-free silicon films, uniformly doped with boron, were grown epitaxially. The samples were then subjected to the processing steps associated with channel profile formation. A gate oxide was grown, then silicon was implanted to simulate the damage due to a source/drain implant. Finally, a damage anneal was done. The resultant experimental dopant profiles as measured using SIMS reveal an important effect which may cause reverse short channel effect. Boron segregation during gate oxidation significantly reduces the boron concentration near the silicon-oxide interface. Subsequent diffusions show that in the presence of damage, the transient enhanced diffusion of boron refills the dopant lost during segregation. In the absence of damage, the profile remains as it was after gate oxidation.
{"title":"The role of boron segregation and transient enhanced diffusion on reverse short channel effect","authors":"C. Machala, R. Wise, D. Mercer, A. Chatterjee","doi":"10.1109/SISPAD.1997.621357","DOIUrl":"https://doi.org/10.1109/SISPAD.1997.621357","url":null,"abstract":"This paper presents the results of an experiment that examines the effects of standard channel formation process steps on boron channel profiles. The experiment is specifically designed to determine the role of various processing steps on reverse short channel effect (RSCE). In the experiment defect-free silicon films, uniformly doped with boron, were grown epitaxially. The samples were then subjected to the processing steps associated with channel profile formation. A gate oxide was grown, then silicon was implanted to simulate the damage due to a source/drain implant. Finally, a damage anneal was done. The resultant experimental dopant profiles as measured using SIMS reveal an important effect which may cause reverse short channel effect. Boron segregation during gate oxidation significantly reduces the boron concentration near the silicon-oxide interface. Subsequent diffusions show that in the presence of damage, the transient enhanced diffusion of boron refills the dopant lost during segregation. In the absence of damage, the profile remains as it was after gate oxidation.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"2 3 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79352986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-08DOI: 10.1016/S0920-5489(99)92304-8
G. Schrom, V. De, S. Selberherr
{"title":"VLSI performance metric based on minimum TCAD simulations","authors":"G. Schrom, V. De, S. Selberherr","doi":"10.1016/S0920-5489(99)92304-8","DOIUrl":"https://doi.org/10.1016/S0920-5489(99)92304-8","url":null,"abstract":"","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"27 1","pages":"1-29"},"PeriodicalIF":0.0,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73425520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-08DOI: 10.1109/SISPAD.1997.621399
G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell
A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF2 and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.
{"title":"A computationally efficient ion implantation damage model and its application to multiple implant simulations","authors":"G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell","doi":"10.1109/SISPAD.1997.621399","DOIUrl":"https://doi.org/10.1109/SISPAD.1997.621399","url":null,"abstract":"A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF2 and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"54 1","pages":"1-40"},"PeriodicalIF":0.0,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85516667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-08DOI: 10.1109/TCAD.1996.6449167
Christoph Jungemann, S. Yamaguchi, H. Goto
A criterion for the convergence of the stochastic Monte Carlo simulations is necessary to ensure the reliability of their results and to guarantee efficiency. Due to the finite scattering rate in Monte Carlo simulations all quantities are in general correlated in time. This makes the estimation of the stochastic error of the sampled statistics difficult. In this work the theoretical basis of a method found in literature is explored which allows to calculate the stochastic error of stationary Ensemble Monte Carlo simulations and which requires only a rough estimate of the magnitude of the largest correlation time of the sampled quantities. The feasibility of the method is demonstrated by application to substrate current calculations for nMOSFETs.
{"title":"Convergence estimation for stationary ensemble Monte Carlo simulations","authors":"Christoph Jungemann, S. Yamaguchi, H. Goto","doi":"10.1109/TCAD.1996.6449167","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449167","url":null,"abstract":"A criterion for the convergence of the stochastic Monte Carlo simulations is necessary to ensure the reliability of their results and to guarantee efficiency. Due to the finite scattering rate in Monte Carlo simulations all quantities are in general correlated in time. This makes the estimation of the stochastic error of the sampled statistics difficult. In this work the theoretical basis of a method found in literature is explored which allows to calculate the stochastic error of stationary Ensemble Monte Carlo simulations and which requires only a rough estimate of the magnitude of the largest correlation time of the sampled quantities. The feasibility of the method is demonstrated by application to substrate current calculations for nMOSFETs.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"320 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76461212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-01-01DOI: 10.1109/TCAD.1996.6449179
G. Wang, B. Obradovic, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch
Ion implantation is a critical technology in semiconductor Ultra Large Scale Integration (ULSI). Binary collision approximation (BCA)-based Monte Carlo (MC) ion implantation simulators are commonly used to predict the impurity and damage profiles. A deterministic propagator is needed in these simulators to simulate the propagation of ions in crystalline materials. A search-for-target algorithm is frequently called to determine the collision partners and collision parameters in a deterministic propagator, and this is usually the computational bottleneck of MC ion implantation simulators. The standard search-for-target algorithm has been redesigned for computational efficiency and for economic usage of memory. Instead of searching for collision partners in a standard 29-atom crystal neighborhood identical to all ions, narrowed-down potential target lists are pre-computed based on the ion's relative position to a reference point as well as its direction of motion. The American National Standards Institution (ANSI) C++ standard container class bitset [1] is used to store such potential target lists, and the memory usage is very efficient. Combined with a quasi-simultaneous collision algorithm, the CPU times for MeV P and B implantation simulations are found to be reduced by more than a factor of two, rendering very reasonable computation times for MeV ion implantation simulations on standard workstations.
{"title":"A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator","authors":"G. Wang, B. Obradovic, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch","doi":"10.1109/TCAD.1996.6449179","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449179","url":null,"abstract":"Ion implantation is a critical technology in semiconductor Ultra Large Scale Integration (ULSI). Binary collision approximation (BCA)-based Monte Carlo (MC) ion implantation simulators are commonly used to predict the impurity and damage profiles. A deterministic propagator is needed in these simulators to simulate the propagation of ions in crystalline materials. A search-for-target algorithm is frequently called to determine the collision partners and collision parameters in a deterministic propagator, and this is usually the computational bottleneck of MC ion implantation simulators. The standard search-for-target algorithm has been redesigned for computational efficiency and for economic usage of memory. Instead of searching for collision partners in a standard 29-atom crystal neighborhood identical to all ions, narrowed-down potential target lists are pre-computed based on the ion's relative position to a reference point as well as its direction of motion. The American National Standards Institution (ANSI) C++ standard container class bitset [1] is used to store such potential target lists, and the memory usage is very efficient. Combined with a quasi-simultaneous collision algorithm, the CPU times for MeV P and B implantation simulations are found to be reduced by more than a factor of two, rendering very reasonable computation times for MeV ion implantation simulations on standard workstations.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"73 1","pages":"1-19"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80458378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-01-01DOI: 10.1109/TCAD.1996.6449178
S. Mukundan, M. Pagey, C. Cirba, peixiong zhao, K. Galloway
We present a TCAD-based approach for characterizing hot-carrier degradation in p-channel MOSFETs that includes models for hot-electron injection, carrier transport, and electron trapping in the oxide. The energy-balance equations have been solved in the silicon substrate to accurately model the carrier-heating and injection processes. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in p-channel MOSFETs. The simulations have been compared with experimental data obtained from 0.8μm SOI pMOS devices and show an excellent match.
我们提出了一种基于tcad的方法来表征p沟道mosfet中的热载子降解，包括热电子注入，载流子输运和氧化物中的电子捕获模型。在硅衬底上求解了能量平衡方程，以精确模拟载流子加热和注入过程。这种方法清楚地说明了p沟道mosfet中热载流子退化的物理机制。仿真结果与0.8μm SOI pMOS器件的实验数据吻合良好。
{"title":"TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations","authors":"S. Mukundan, M. Pagey, C. Cirba, peixiong zhao, K. Galloway","doi":"10.1109/TCAD.1996.6449178","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449178","url":null,"abstract":"We present a TCAD-based approach for characterizing hot-carrier degradation in p-channel MOSFETs that includes models for hot-electron injection, carrier transport, and electron trapping in the oxide. The energy-balance equations have been solved in the silicon substrate to accurately model the carrier-heating and injection processes. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in p-channel MOSFETs. The simulations have been compared with experimental data obtained from 0.8μm SOI pMOS devices and show an excellent match.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"7 1","pages":"1-13"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75331451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-01-01DOI: 10.1109/TCAD.1996.6449173
Jlong-Guang Su, S. Wong, Daisy Lee, Chi-Tsung Huang, B. Tsui
Halo structure is usually adopted in deep submicron MOS devices for off-state leakage current reduction. Tilt angle of the Halo implant determines dopant distribution which gives anti-punchthrough operation. In this paper, we investigate the impact of tile angle on both DC and AC performance of Halo PMOS device via 2-D simulations. For DC performance, it is found that same conduction current is obtained for all tilt angles at same leakage current level. This performance equivalence can be traced back to a self compensation between body factor and source resistance, and implies that low tilt angle should be adopted for Halo devices, as it gives small threshold voltage and thus high noise margin. For AC performance, it is found that at same leakage current level, all tilt angles give same gate-to-drain capacitance and that lower tilt angle gives smaller drain-to-bulk junction capacitance.
{"title":"Tilt angle effect on DC and AC performance of Halo PMOS","authors":"Jlong-Guang Su, S. Wong, Daisy Lee, Chi-Tsung Huang, B. Tsui","doi":"10.1109/TCAD.1996.6449173","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449173","url":null,"abstract":"Halo structure is usually adopted in deep submicron MOS devices for off-state leakage current reduction. Tilt angle of the Halo implant determines dopant distribution which gives anti-punchthrough operation. In this paper, we investigate the impact of tile angle on both DC and AC performance of Halo PMOS device via 2-D simulations. For DC performance, it is found that same conduction current is obtained for all tilt angles at same leakage current level. This performance equivalence can be traced back to a self compensation between body factor and source resistance, and implies that low tilt angle should be adopted for Halo devices, as it gives small threshold voltage and thus high noise margin. For AC performance, it is found that at same leakage current level, all tilt angles give same gate-to-drain capacitance and that lower tilt angle gives smaller drain-to-bulk junction capacitance.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"44 1","pages":"1-31"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89765605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-01-01DOI: 10.1109/TCAD.1996.6449165
P. Fleischmann, S. Selberherr
We introduce a combination of Delaunay methods with advancing front techniques especially suitable for local regridding and semiconductor simulation applications. element quality improvement can be handled by local mesh adaptation steps. the three-dimensional meshing algorithm is suitable for complicated structures, because of its fully unstructured nature. the resulting Delaunay mesh possesses the flexibility possible within the scope of a tetrahedral representation not like octree based or other cartesian meshes which are commonly employed in technology cad (TCAD).
{"title":"Fully unstructured Delaunay mesh generation using a modified advancing front approach for applications in technology cad","authors":"P. Fleischmann, S. Selberherr","doi":"10.1109/TCAD.1996.6449165","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449165","url":null,"abstract":"We introduce a combination of Delaunay methods with advancing front techniques especially suitable for local regridding and semiconductor simulation applications. element quality improvement can be handled by local mesh adaptation steps. the three-dimensional meshing algorithm is suitable for complicated structures, because of its fully unstructured nature. the resulting Delaunay mesh possesses the flexibility possible within the scope of a tetrahedral representation not like octree based or other cartesian meshes which are commonly employed in technology cad (TCAD).","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"51 1","pages":"1-38"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86922853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-01-01DOI: 10.1109/TCAD.1996.6449175
Y. Chen, B. Obradovic, M. Morris, G. Wang, G. Balamurugan, D. Li, A. Tasch, D. Kamenitsa, W. McCoy, S. Baumann, R. Bleier, D. Sieloff, D. Dyer, P. Zeitzoff
Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been developed primarily for use on engineering workstations. These models provide the required as-implanted impurity profiles as well as damage profiles, which can be used as inputs for transient enhanced diffusion simulation and subsequent multiple implant simulation. A comparison of simulation results with experimental data shows that the models predict both the impurity profiles and the damage profiles very successfully for a wide range of implant conditions. The damage profiles from germanium implant simulations have been used for subsequent multiple implant simulations and excellent agreement with experimental results has been achieved.
{"title":"Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon","authors":"Y. Chen, B. Obradovic, M. Morris, G. Wang, G. Balamurugan, D. Li, A. Tasch, D. Kamenitsa, W. McCoy, S. Baumann, R. Bleier, D. Sieloff, D. Dyer, P. Zeitzoff","doi":"10.1109/TCAD.1996.6449175","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449175","url":null,"abstract":"Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been developed primarily for use on engineering workstations. These models provide the required as-implanted impurity profiles as well as damage profiles, which can be used as inputs for transient enhanced diffusion simulation and subsequent multiple implant simulation. A comparison of simulation results with experimental data shows that the models predict both the impurity profiles and the damage profiles very successfully for a wide range of implant conditions. The damage profiles from germanium implant simulations have been used for subsequent multiple implant simulations and excellent agreement with experimental results has been achieved.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"89 1","pages":"1-20"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74815027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-01-01DOI: 10.1109/TCAD.1996.6449159
C. Jungemann, S. Decker, R. Thoma, W.-L. Engh, Hiroshi Goto
A new Multiple Refresh technique is presented, which can be applied to the enhancement of statistics in phase space during Monte Carlo device simulation without being restricted to ergodic or stationary systems. The method allows to specify the number of particles simulated in different regions of phase space and therefore to control directly the noise in those regions. It can improve the statistics of rare events like for example hot electron effects by many orders of magnitude without prohibitive CPU times. The problem of noise and correlation inherent to statistical enhancement methods which manipulate particle numbers is minimized. It is shown that the method does not impair the one particle distribution function and that it is more stable in a stochastic sense than other equally general methods, because it conserves particle charge exactly. The method itself consumes only a few percent of the total CPU time spent for a simulation and does not cause any computational overhead in parallel calculations. The method is very flexible and easy to apply, because it acts only on the particle ensemble at certain times and does not interfere with the Monte Carlo simulation itself. The potential of the Multiple Refresh technique is demonstrated for different important device applications.
{"title":"Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation","authors":"C. Jungemann, S. Decker, R. Thoma, W.-L. Engh, Hiroshi Goto","doi":"10.1109/TCAD.1996.6449159","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449159","url":null,"abstract":"A new Multiple Refresh technique is presented, which can be applied to the enhancement of statistics in phase space during Monte Carlo device simulation without being restricted to ergodic or stationary systems. The method allows to specify the number of particles simulated in different regions of phase space and therefore to control directly the noise in those regions. It can improve the statistics of rare events like for example hot electron effects by many orders of magnitude without prohibitive CPU times. The problem of noise and correlation inherent to statistical enhancement methods which manipulate particle numbers is minimized. It is shown that the method does not impair the one particle distribution function and that it is more stable in a stochastic sense than other equally general methods, because it conserves particle charge exactly. The method itself consumes only a few percent of the total CPU time spent for a simulation and does not cause any computational overhead in parallel calculations. The method is very flexible and easy to apply, because it acts only on the particle ensemble at certain times and does not interfere with the Monte Carlo simulation itself. The potential of the Multiple Refresh technique is demonstrated for different important device applications.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"29 1","pages":"1-24"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89134262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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