{"title":"1.25 volt, low cost, embedded flash memory for low density applications","authors":"R. McPartland, R. Singh","doi":"10.1109/VLSIC.2000.852878","DOIUrl":null,"url":null,"abstract":"A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4 kbit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.","PeriodicalId":6361,"journal":{"name":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","volume":"319 1","pages":"158-161"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2000.852878","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4 kbit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.
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