AlGaN/GaN devices for future power switching systems

D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa
{"title":"AlGaN/GaN devices for future power switching systems","authors":"D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa","doi":"10.1109/IEDM.2005.1609355","DOIUrl":null,"url":null,"abstract":"GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (Ron), we developed SL (super lattice) capping and QA (quaternary alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make the cost comparable to conventional Si one. The experimentally obtained RonA of the FET is 1.9 mOmegacm2, which is 14 times lower than that of Si ones. Additionally, a novel approach to realize enhancement-mode operation of GaN/AlGaN FET is examined over R-plane sapphire, where non-polar AlGaN/GaN heterostructure, free from polarization charge, can be grown","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"34 1","pages":"377-380"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (Ron), we developed SL (super lattice) capping and QA (quaternary alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make the cost comparable to conventional Si one. The experimentally obtained RonA of the FET is 1.9 mOmegacm2, which is 14 times lower than that of Si ones. Additionally, a novel approach to realize enhancement-mode operation of GaN/AlGaN FET is examined over R-plane sapphire, where non-polar AlGaN/GaN heterostructure, free from polarization charge, can be grown
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于未来电源开关系统的AlGaN/GaN器件
针对GaN/AlGaN器件在电源开关系统中的应用,提出了GaN/AlGaN器件技术。为了降低导通电阻(Ron),我们开发了用于GaN/AlGaN HFET的SL(超晶格)封盖和QA(季元合金)过层技术。此外,我们在Si(111)衬底上生长的GaN/AlGaN异质结构在保持相同2DEG密度的情况下实现了几乎相同的迁移率,这将使成本与传统Si(111)相当。实验得到的FET的RonA为1.9 mOmegacm2,比Si的RonA低14倍。此外,研究了一种在r面蓝宝石上实现GaN/AlGaN场效应管增强模式工作的新方法,该方法可以生长出无极化电荷的非极性AlGaN/GaN异质结构
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique Light emitting silicon nanostructures A 65nm NOR flash technology with 0.042/spl mu/m/sup 2/ cell size for high performance multilevel application Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE) An intra-chip electro-optical channel based on CMOS single photon detectors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1