Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications

Michael Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub
{"title":"Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications","authors":"Michael Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub","doi":"10.1109/SISPAD.2019.8870482","DOIUrl":null,"url":null,"abstract":"We present a parallelized algorithm for accelerating the velocity extension calculations in a level-set method, which is essential for surface velocity based topography simulations, such as etching or deposition simulations for nanopatterning applications. The proposed algorithm improves the prevailing fast marching method by optimizing the heap data structure and efficiently reordering the calculations. We implemented the algorithm into Silvaco’s Victory Process simulator, which is utilized for evaluating our algorithm with a three-dimensional simulation of an ion beam etching process used for spin-transfer torque magnetoresistive random access memory devices. Our results show a significant serial speed-up by a factor of at least 1.4 and a total speed-up by a factor of up to 8 using 8 threads for the velocity extension.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"68 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We present a parallelized algorithm for accelerating the velocity extension calculations in a level-set method, which is essential for surface velocity based topography simulations, such as etching or deposition simulations for nanopatterning applications. The proposed algorithm improves the prevailing fast marching method by optimizing the heap data structure and efficiently reordering the calculations. We implemented the algorithm into Silvaco’s Victory Process simulator, which is utilized for evaluating our algorithm with a three-dimensional simulation of an ion beam etching process used for spin-transfer torque magnetoresistive random access memory devices. Our results show a significant serial speed-up by a factor of at least 1.4 and a total speed-up by a factor of up to 8 using 8 threads for the velocity extension.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
纳米图形应用的并行水平集速度扩展算法
我们提出了一种并行算法,用于在水平集方法中加速速度扩展计算,这对于基于表面速度的地形模拟至关重要,例如用于纳米图案应用的蚀刻或沉积模拟。该算法通过优化堆数据结构和有效地重新排序计算,改进了目前流行的快速行军方法。我们在Silvaco的Victory Process模拟器中实现了该算法,并利用该模拟器对用于自旋转移转矩磁阻随机存取存储器的离子束刻蚀过程进行了三维模拟,以评估我们的算法。我们的结果显示,使用8个线程进行速度扩展时,串行加速至少提高了1.4倍,总速度提高了8倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of Stacking Faults on the Thermoelectric Figure of Merit of Si Nanowires Effect of Trap on Carrier Transport in InAs FET with Al2 O3 Oxide: DFT-based NEGF simulations Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide Quantum Transport Simulations of the Zero Temperature Coefficient in Gate-all-around Nanowire pFETs Electronic and structural properties of interstitial titanium in crystalline silicon from first-principles simulations
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1