H. Lue, Szu-Yu Wang, E. Lai, Y. Shih, S. Lai, Ling-Wu Yang, Kuang-Chao Chen, J. Ku, K. Hsieh, Rich Liu, Chih-Yuan Lu
{"title":"BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability","authors":"H. Lue, Szu-Yu Wang, E. Lai, Y. Shih, S. Lai, Ling-Wu Yang, Kuang-Chao Chen, J. Ku, K. Hsieh, Rich Liu, Chih-Yuan Lu","doi":"10.1109/IEDM.2005.1609404","DOIUrl":null,"url":null,"abstract":"A bandgap engineered SONOS with greatly improved reliability properties is proposed. This concept is demonstrated by a multilayer structure of O1/N1/O2/N2/O3, where the ultra-thin \"O1/N1/O2\" serves as a non-trapping tunneling dielectric, N2 the high-trapping-rate charge storage layer, and O3 the blocking oxide. The ultra-thin \"O1/N1/O2\" provides a \"modulated tunneling barrier\" - it suppresses direct tunneling at low electric field during retention, while it allows efficient hole tunneling erase at high electric field due to the band offset. Therefore, this BE-SONOS offers fast hole tunneling erase, while it is immune to the retention problem of the conventional SONOS. With a N+-poly gate, we achieve self-convergent erased Vt ~3 V, suitable for NOR flash application. On the other hand, by using a P+-poly gate, a depletion mode device (Vt < 0) is obtained, and a very large memory window (> 6 V) is achieved, ideal for MLC-NAND application. Excellent performance and reliability for both applications are demonstrated. Furthermore, with this simple structure and no new materials BE-SONOS is readily manufacturable","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"59 1","pages":"547-550"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"122","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 122
Abstract
A bandgap engineered SONOS with greatly improved reliability properties is proposed. This concept is demonstrated by a multilayer structure of O1/N1/O2/N2/O3, where the ultra-thin "O1/N1/O2" serves as a non-trapping tunneling dielectric, N2 the high-trapping-rate charge storage layer, and O3 the blocking oxide. The ultra-thin "O1/N1/O2" provides a "modulated tunneling barrier" - it suppresses direct tunneling at low electric field during retention, while it allows efficient hole tunneling erase at high electric field due to the band offset. Therefore, this BE-SONOS offers fast hole tunneling erase, while it is immune to the retention problem of the conventional SONOS. With a N+-poly gate, we achieve self-convergent erased Vt ~3 V, suitable for NOR flash application. On the other hand, by using a P+-poly gate, a depletion mode device (Vt < 0) is obtained, and a very large memory window (> 6 V) is achieved, ideal for MLC-NAND application. Excellent performance and reliability for both applications are demonstrated. Furthermore, with this simple structure and no new materials BE-SONOS is readily manufacturable