Analysis and simulation of inverter employing SiC Schottky diode

Yang Gu, Yuming Zhang, Yimen Zhang, Hongliang Lu, Renxu Jia
{"title":"Analysis and simulation of inverter employing SiC Schottky diode","authors":"Yang Gu, Yuming Zhang, Yimen Zhang, Hongliang Lu, Renxu Jia","doi":"10.1109/EDSSC.2011.6117728","DOIUrl":null,"url":null,"abstract":"The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"19 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
SiC肖特基二极管逆变器的分析与仿真
分析了二极管反向恢复对逆变器性能的影响。在相同条件下,分别以Si p-i-n超快二极管和SiC肖特基二极管作为自由旋转二极管,对SPWM全桥逆变器进行了PSpice仿真。结果表明,SiC肖特基二极管可以大大降低逆变器的功率损耗。进一步讨论了二极管参数CJO对反向恢复特性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Copyright page Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate 3D modeling of CMOS image sensor: From process to opto-electronic response A novel compact isolated structure for 600V Gate Drive IC Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1