{"title":"A high-performance and low-noise CMOS image sensor with an expanding photodiode under the isolation oxide","authors":"K. Itonaga, H. Abe, I. Yoshihara, T. Hirayama","doi":"10.1109/IEDM.2005.1609474","DOIUrl":null,"url":null,"abstract":"We've realized a 2.5-mum square pixel with high saturation electron capacity and sensitivity, which realizes the low dark current as well as triple Qs value of the conventional STI, by expanding the buried photodiode under the isolation oxide, and the sensitivity gain will be 20% higher using the Cu process than is possible with the Al process","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"67 1","pages":"4 pp.-794"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We've realized a 2.5-mum square pixel with high saturation electron capacity and sensitivity, which realizes the low dark current as well as triple Qs value of the conventional STI, by expanding the buried photodiode under the isolation oxide, and the sensitivity gain will be 20% higher using the Cu process than is possible with the Al process
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