Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243318
Y. Liu, T. Kamei, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura, M. Masahara
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引用次数: 2

Abstract

The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n+-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller Vt variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.
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三栅极与双栅极型多晶硅鳍状通道分闸闪存的比较研究
成功制备了三栅极(TG)型和双栅极(DG)型多晶硅鳍状通道分闸闪存，并比较研究了它们的电学特性，包括阈值电压(Vt)和s斜率的变化。实验发现，tg型闪存比dg型闪存具有更好的抗短通道效应(SCE)、更小的Vt变化和更高的程序速度。此外，还证实了劈裂门结构可以有效地抑制过擦。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2012 IEEE Silicon Nanoelectronics Workshop (SNW)
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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