Xiao Han, Jie Jiang, Bin Zhou, Jia Sun, Wei Dou, Huixuan Liu, Qing Wan
{"title":"Low-voltage indium-zinc-oxide thin film transistors gated by solution-processed chitosan-based proton conductors","authors":"Xiao Han, Jie Jiang, Bin Zhou, Jia Sun, Wei Dou, Huixuan Liu, Qing Wan","doi":"10.1109/EDSSC.2011.6117692","DOIUrl":null,"url":null,"abstract":"We fabricated indium-zinc-oxide (IZO) thin film transistors (TFT) gated by chitosan (CS) on ITO/glass substrate. Chitosan is demonstrated to be a new kind of solution-processed organic polymer electrolyte, which has nice film-forming characteristic. The chitosan thin film shows a large specific gate capacitance of 8.06 (µF/cm2 due to the mobile-ions induced electric-double-layer effect. These devices exhibited a good performance with a small subthreshold swing of 0.3 V/dec, a large on-off current ratio of ∼106, a high field-effect mobility of 1.24 cm2V−1 s−1 and a low operate voltage of 2 V. The solution-processed chitosan-based TFTs may have many potential applications for large-area, mechanically flexible, lightweight, and inexpensive electronic logic circuits.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We fabricated indium-zinc-oxide (IZO) thin film transistors (TFT) gated by chitosan (CS) on ITO/glass substrate. Chitosan is demonstrated to be a new kind of solution-processed organic polymer electrolyte, which has nice film-forming characteristic. The chitosan thin film shows a large specific gate capacitance of 8.06 (µF/cm2 due to the mobile-ions induced electric-double-layer effect. These devices exhibited a good performance with a small subthreshold swing of 0.3 V/dec, a large on-off current ratio of ∼106, a high field-effect mobility of 1.24 cm2V−1 s−1 and a low operate voltage of 2 V. The solution-processed chitosan-based TFTs may have many potential applications for large-area, mechanically flexible, lightweight, and inexpensive electronic logic circuits.
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