Design of CNFET-based Low-Power Ternary Sequential Logic circuits

Sharvani Gadgil, C. Vudadha
{"title":"Design of CNFET-based Low-Power Ternary Sequential Logic circuits","authors":"Sharvani Gadgil, C. Vudadha","doi":"10.1109/NANO51122.2021.9514328","DOIUrl":null,"url":null,"abstract":"Scaling of transistors beyond a certain limit is giving rise to problems in the traditional CMOS (Complementary - Metal-Oxide-Semiconductor) technology. This has lead researchers to explore newer technologies like the CNFET(Carbon-Nanotube-Field-Effect- Transistor). Design of ternary logic circuits using CNFETs has been gaining interest recently which gives benefits for power consumption, interconnection etc when compared to binary logic. Various ternary sequential circuits have been implemented in literature. This paper proposes a new designs for sequential circuits like D-latch and D-flipflop. The proposed successor-predecessor based latch design is multiplexer based that optimises power consumption when compared to existing designs. Ternary flipflop is also designed using the proposed mux based latch design. All the proposed designs are simulated using HSPICE and a standard Stanford CNFET model. Simulation results for the proposed successor-predecessor based D-latch design and proposed D-flipflop design shows an improvement of upto 36% and 51% in power respectively, as compared to designs existing in literature.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"32 1","pages":"169-172"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO51122.2021.9514328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Scaling of transistors beyond a certain limit is giving rise to problems in the traditional CMOS (Complementary - Metal-Oxide-Semiconductor) technology. This has lead researchers to explore newer technologies like the CNFET(Carbon-Nanotube-Field-Effect- Transistor). Design of ternary logic circuits using CNFETs has been gaining interest recently which gives benefits for power consumption, interconnection etc when compared to binary logic. Various ternary sequential circuits have been implemented in literature. This paper proposes a new designs for sequential circuits like D-latch and D-flipflop. The proposed successor-predecessor based latch design is multiplexer based that optimises power consumption when compared to existing designs. Ternary flipflop is also designed using the proposed mux based latch design. All the proposed designs are simulated using HSPICE and a standard Stanford CNFET model. Simulation results for the proposed successor-predecessor based D-latch design and proposed D-flipflop design shows an improvement of upto 36% and 51% in power respectively, as compared to designs existing in literature.
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基于cnfet的低功耗三元顺序逻辑电路设计
传统的CMOS (Complementary - metal - oxide semiconductor,互补金属氧化物半导体)技术中,晶体管的尺寸超过一定的限制就会出现问题。这促使研究人员探索新的技术,如CNFET(碳纳米管场效应晶体管)。使用cnfet设计三元逻辑电路最近引起了人们的兴趣,与二进制逻辑相比,它在功耗,互连等方面具有优势。各种三元顺序电路已经在文献中实现。本文提出了一种新的顺序电路设计,如d锁存器和d触发器。所提出的基于后继-前代锁存器的设计是基于多路复用器的,与现有设计相比,可以优化功耗。利用所提出的基于多路锁存器的设计,还设计了三元触发器。采用HSPICE和标准斯坦福CNFET模型对所有设计进行了仿真。仿真结果表明,与现有文献设计相比,基于后继-前驱d锁存器设计和d触发器设计的功率分别提高了36%和51%。
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