Sang Wan Kim, W. Choi, Hyungjin Kim, Min-Chul Sun, H. Kim, Byung-Gook Park
{"title":"Investigation on hump effects of L-shaped tunneling filed-effect transistors","authors":"Sang Wan Kim, W. Choi, Hyungjin Kim, Min-Chul Sun, H. Kim, Byung-Gook Park","doi":"10.1109/SNW.2012.6243306","DOIUrl":null,"url":null,"abstract":"In this paper, hump effects of L-shaped tunneling field-effect transistors (TFETs) have been investigated. It turns out that the hump effects are originated from the two different turn-on voltages (Vturn-on's). By using device simulation, the source junction design has been optimized in order to suppress the hump effects.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In this paper, hump effects of L-shaped tunneling field-effect transistors (TFETs) have been investigated. It turns out that the hump effects are originated from the two different turn-on voltages (Vturn-on's). By using device simulation, the source junction design has been optimized in order to suppress the hump effects.
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