{"title":"Photoluminescence Imaging vs. Transient Photoconductance Characterization at High Injection: Case of mc-Si","authors":"A. Semichaevsky","doi":"10.1109/PVSC.2018.8547920","DOIUrl":null,"url":null,"abstract":"Band-to-band photoluminescence (PL) imaging is one of the experimental techniques widely used to assess nonradiative recombination rates at a fixed incident light intensity. Minority carrier lifetimes in semiconductors such as mc-Si are also affected by optical injection levels These can be measured by transient photoconductance (TPC). In this paper, PL imaging of shunts and TPC lifetime results for incident intensities of up to 50 Suns are compared for multiple samples of mc-Si.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"9 1","pages":"3309-3311"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2018.8547920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Band-to-band photoluminescence (PL) imaging is one of the experimental techniques widely used to assess nonradiative recombination rates at a fixed incident light intensity. Minority carrier lifetimes in semiconductors such as mc-Si are also affected by optical injection levels These can be measured by transient photoconductance (TPC). In this paper, PL imaging of shunts and TPC lifetime results for incident intensities of up to 50 Suns are compared for multiple samples of mc-Si.
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