Bottom-Up Nanointegration Technique for Novel Functionalized Carbon Nanotube and Multi-layer Graphene Device Fabrication

C. Coleman, S. Ncube, I. S. Mosse, A. Irzhak, V. Koledov, S. Gratowski, A. D. Sousa, S. Bhattacharyya
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引用次数: 1

Abstract

This study is devoted to the creation and characterization of nano-electronic devices fabricated from bundles of functionalized carbon nanotubes as well as multilayer graphene. The fabrication technique focuses on nanointegration utilizing a nano-tweezer created from memory metal. The devices envisioned include crossed junction as well as fine network structures that can be manipulated using nano-probes. As the carbon nanotubes have been functionalized with nanoscale magnetic molecules, such devices are interesting for novel spintronic applications. In addition, the fabrication of multi-layered graphene structures is demonstrated, these devices are particularly interesting for investigating the effect of local deformations which can be induced through the manipulation process.
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新型功能化碳纳米管和多层石墨烯器件的自下而上纳米集成技术
本研究致力于由功能化碳纳米管束和多层石墨烯制成的纳米电子器件的创建和表征。制造技术的重点是利用由记忆金属制成的纳米镊子进行纳米集成。设想的器件包括交叉结以及可以使用纳米探针操纵的精细网络结构。由于碳纳米管已被纳米级磁性分子功能化,这类器件在自旋电子学的新应用中很有意义。此外,还演示了多层石墨烯结构的制造,这些器件对于研究通过操纵过程引起的局部变形的影响特别有趣。
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