Compact Modeling Perspetive – Bridge to Industrial Applications

M. Miura-Mattausch
{"title":"Compact Modeling Perspetive – Bridge to Industrial Applications","authors":"M. Miura-Mattausch","doi":"10.1109/SISPAD.2019.8870471","DOIUrl":null,"url":null,"abstract":"This paper summarizes briefly compact-model development history, which is characterized by the evolution into the role as a bridge between devices and circuits. It is demonstrated that the task of predicting circuitry performance accurately has been realized by considering the microscopic features of the device phenomena in the compact model, which had been previously treated only macroscopically.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper summarizes briefly compact-model development history, which is characterized by the evolution into the role as a bridge between devices and circuits. It is demonstrated that the task of predicting circuitry performance accurately has been realized by considering the microscopic features of the device phenomena in the compact model, which had been previously treated only macroscopically.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
紧凑的建模透视-桥梁到工业应用
本文简要总结了紧凑模型的发展历史,其特点是演变为器件和电路之间的桥梁。结果表明,通过考虑紧凑模型中器件现象的微观特征,可以实现精确预测电路性能的任务,而以前只能从宏观上进行处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of Stacking Faults on the Thermoelectric Figure of Merit of Si Nanowires Effect of Trap on Carrier Transport in InAs FET with Al2 O3 Oxide: DFT-based NEGF simulations Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide Quantum Transport Simulations of the Zero Temperature Coefficient in Gate-all-around Nanowire pFETs Electronic and structural properties of interstitial titanium in crystalline silicon from first-principles simulations
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1