D. Ielmini, A. Spinelli, A. Lacaita, L. Chiavarone, A. Visconti
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引用次数: 3
Abstract
A new experimental technique for investigating the trapping-detrapping time constants for electrons at stress-induced defects in the silicon oxide is presented. The new technique is based on the gate-stress measurement for flash memories, with the application of a pulsed gate voltage. Data for 512 Kbit NOR-flash arrays are presented, and analyzed by analytical and Monte Carlo models for the trap-assisted tunneling mechanism under pulsed conditions. Comparison between experimental data and calculations for selected cells allows for an estimation of the energy and spatial depth of the oxide traps
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