A simple model-base prediction method for delamination failures in Low-k/cu interconnects with flip chip packages

J. Kawahara, I. Kume, H. Honda, Y. Kyogoku, F. Ito, M. Hane, K. Kata, Y. Hayashi
{"title":"A simple model-base prediction method for delamination failures in Low-k/cu interconnects with flip chip packages","authors":"J. Kawahara, I. Kume, H. Honda, Y. Kyogoku, F. Ito, M. Hane, K. Kata, Y. Hayashi","doi":"10.1109/IITC.2013.6615560","DOIUrl":null,"url":null,"abstract":"A model-base prediction method is proposed for delamination/cracking failures in Low-k/Cu interconnects with Pb-free FCBGA (Flip Chip-Ball Grid Array). The low-k failure under the solder bump, so called as a white bump (WB) failure, is caused by large thermal stress to a brittle low-k film during the cooling process from high reflow temperature for the Pb-free solder. Based on failure analysis using several low-k films and several packaging materials/structures, we found that occurrence of the WB failure is able to be predicted by a simple evaluation function of the simulated strain energy and a critical energy release rate of crack, which is defined by the fracture toughness and the adhesion-strength of the low-k film. According to this method, we can lead a preliminary design guideline on the bump pitch/structure or the interposer material/structure toward no WE failure quickly.","PeriodicalId":6377,"journal":{"name":"2013 IEEE International Interconnect Technology Conference - IITC","volume":"17 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Interconnect Technology Conference - IITC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2013.6615560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A model-base prediction method is proposed for delamination/cracking failures in Low-k/Cu interconnects with Pb-free FCBGA (Flip Chip-Ball Grid Array). The low-k failure under the solder bump, so called as a white bump (WB) failure, is caused by large thermal stress to a brittle low-k film during the cooling process from high reflow temperature for the Pb-free solder. Based on failure analysis using several low-k films and several packaging materials/structures, we found that occurrence of the WB failure is able to be predicted by a simple evaluation function of the simulated strain energy and a critical energy release rate of crack, which is defined by the fracture toughness and the adhesion-strength of the low-k film. According to this method, we can lead a preliminary design guideline on the bump pitch/structure or the interposer material/structure toward no WE failure quickly.
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采用倒装封装的低k/cu互连中分层失效的简单模型预测方法
提出了一种基于模型的无铅FCBGA (Flip Chip-Ball Grid Array)低k/Cu互连脱层/开裂故障预测方法。焊料凸点下的低k失效称为白凸点(WB)失效,是由于无铅焊料在高回流温度冷却过程中对脆性低k膜产生较大的热应力造成的。通过对几种低k薄膜和几种包装材料/结构的失效分析,我们发现可以通过模拟应变能和裂纹临界能量释放率的简单评价函数来预测WB失效的发生,而裂纹的临界能量释放率是由低k薄膜的断裂韧性和粘接强度定义的。根据这种方法,我们可以在碰撞间距/结构或中间材料/结构的初步设计指导下快速实现无we失效。
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