Facile approach of enhanced heat mitigation between 3D stacked layers by Introducing a sub micron thick heat spreading materials

C. H. Kumar, A. Panigrahi, P. Supraja, N. Paul, S. Singh
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引用次数: 1

Abstract

Polder and Van Hove in 1971 forecasted, it is possible to transfer heat between the planer surface by phonon tunneling mechanism, having interlayer separation that is comparable to the phonon wavelength. Towards that, in this work we examined the heat mitigation issues widely prevalent in 3D stacked ICs using finite element analysis. We observed batter heat mitigation by using optimized thickness of heat spreader sandwiched between ICs, containing TTSVs. FEM result shows nearly 15 oC reduction in temperature from 313oC to 298 oC of the top most IC in a 3D stack compared with the case without TTSV and heat spreader in the ILD plane.
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通过引入亚微米厚的散热材料来增强3D堆叠层之间的热缓解
Polder和Van Hove(1971)预测,通过声子隧穿机制在刨床表面之间传递热量是可能的,具有与声子波长相当的层间分离。为此,在这项工作中,我们使用有限元分析研究了3D堆叠ic中普遍存在的散热问题。我们通过在包含TTSVs的ic之间夹入优化厚度的散热片,观察到电池的散热效果。有限元分析结果表明,与在ILD平面上不加TTSV和散热器的情况相比,3D堆叠中最顶部IC的温度从313℃降低到298℃,降低了近15℃。
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