Thermal distribution measurement upon micro-resistance lines using Thermoreflectance technique

Weikang Si, Libing Zheng, Shuhua Wei
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Abstract

The shrinking in feature size and the increasing operation frequency of integrated devices make temperature characterization and thermal management a crucial aspect of integrated circuit performance and design. To address these challenges, accurate information of temperature distribution or thermal properties at submicron scale is required. There are diverse methods to measure temperature distribution of devices. Infrared thermal imaging is a common method. However, its spatial resolution is limited to several micrometers due to diffraction effect. And its temporal resolution is limited to 2 ms. As a new emerging technique, thermoreflectance imaging is non-contact, nondestructive and has advantages in high temporal and spatial resolution which is useful for hot spot detection and thermal failures prediction. This paper gives an overview of thermoreflectance thermal imaging technique and a description of a home-made setup. The parameter thermoreflectance coefficient is critical for the technique, as it is material and wavelength dependent. This paper provides a general way to acquire thermoreflectance coefficient. In order to demonstrate the advantages of the technique, transient thermal measurement on a micro-resistor is undertaken using this setup.
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热反射技术在微电阻线上的热分布测量
集成器件的特征尺寸的缩小和工作频率的增加使得温度表征和热管理成为集成电路性能和设计的一个重要方面。为了应对这些挑战,需要精确的亚微米尺度温度分布或热特性信息。测量器件温度分布的方法多种多样。红外热成像是一种常用的方法。但由于衍射效应,其空间分辨率限制在几微米。它的时间分辨率被限制在2毫秒。热反射成像作为一种新兴技术,具有非接触式、非破坏性、高时空分辨率等优点,可用于热点探测和热故障预测。本文概述了热反射热成像技术,并介绍了一种自制装置。热反射系数参数对该技术至关重要,因为它依赖于材料和波长。本文提供了一种获取热反射系数的通用方法。为了证明该技术的优势,利用该装置对微电阻进行了瞬态热测量。
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