TSV-defect modeling based electromagnetic full wave analysis and defect diagnosis method design

Abstract

In this paper, modeling for TSV pair structures with void defects, pinhole defects and open defects by using an electromagnetic full wave analysis tool is presented. A low-bandwidth equivalent lumped circuit model of above TSV structures are extracted to analyze the effects of different defect sizes and different defect locations. The simulation results show void defects only minimally affect the TSV resistance. And, the lumped circuit model and scattering parameter are changed by open defects which cut off the TSV completely. Besides, the pinhole of a TSV significantly change the equivalent coupling capacitance between TSV pair. Based on these results, some appropriate testing methods are discussed.