20 Gb/s Dual-Mode SST VCSEL Driver

S. Mahran, O. Liboiron-Ladouceur, G. Cowan
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引用次数: 2

Abstract

This work presents simulation results of a CMOS 1.2-V single-ended source-series-terminated (SST) voltage-mode electrical link driver in a 65 nm technology. The driver operates in two driving modes. The first mode uses symmetric pre-emphasis feedforward equalization to drive a short electrical link which introduces a total loss of 16 dB including electro-static discharge (ESD) and wire bonding losses at 10 GHz. The second mode drives a VCSEL diode through an electrical link exploiting asymmetric equalization. Through simulation, this dual-mode proposed driver operates up to 20 Gb/s and is estimated to dissipate 40 mW of power.
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20gb /s双模SST VCSEL驱动程序
本文介绍了65纳米工艺下CMOS 1.2 v单端源串联端接(SST)电压模式电链路驱动器的仿真结果。驾驶员在两种驾驶模式下操作。第一种模式使用对称的预强调前馈均衡来驱动短电链路,包括静电放电(ESD)和10 GHz的线键合损耗在内的总损耗为16 dB。第二种模式通过利用非对称均衡的电链路驱动VCSEL二极管。通过仿真,该双模驱动器的运行速度高达20gb /s,估计功耗为40mw。
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