R. Tiwari, N. Parihar, Karansingh Thakor, H. Wong, S. Mahapatra
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引用次数: 3
Abstract
A physics-based TCAD framework is used to estimate the interface trap generation (ΔNIT) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (LCH) on ΔNIT generation is estimated. The bandstructure calculations are used to explain the impact of mechanical strain on ΔNIT generation.
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