Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation

C. Jungemann, S. Decker, R. Thoma, W.-L. Engh, Hiroshi Goto
{"title":"Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation","authors":"C. Jungemann, S. Decker, R. Thoma, W.-L. Engh, Hiroshi Goto","doi":"10.1109/TCAD.1996.6449159","DOIUrl":null,"url":null,"abstract":"A new Multiple Refresh technique is presented, which can be applied to the enhancement of statistics in phase space during Monte Carlo device simulation without being restricted to ergodic or stationary systems. The method allows to specify the number of particles simulated in different regions of phase space and therefore to control directly the noise in those regions. It can improve the statistics of rare events like for example hot electron effects by many orders of magnitude without prohibitive CPU times. The problem of noise and correlation inherent to statistical enhancement methods which manipulate particle numbers is minimized. It is shown that the method does not impair the one particle distribution function and that it is more stable in a stochastic sense than other equally general methods, because it conserves particle charge exactly. The method itself consumes only a few percent of the total CPU time spent for a simulation and does not cause any computational overhead in parallel calculations. The method is very flexible and easy to apply, because it acts only on the particle ensemble at certain times and does not interfere with the Monte Carlo simulation itself. The potential of the Multiple Refresh technique is demonstrated for different important device applications.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"29 1","pages":"1-24"},"PeriodicalIF":0.0000,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Technology Computer Aided Design TCAD","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TCAD.1996.6449159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

A new Multiple Refresh technique is presented, which can be applied to the enhancement of statistics in phase space during Monte Carlo device simulation without being restricted to ergodic or stationary systems. The method allows to specify the number of particles simulated in different regions of phase space and therefore to control directly the noise in those regions. It can improve the statistics of rare events like for example hot electron effects by many orders of magnitude without prohibitive CPU times. The problem of noise and correlation inherent to statistical enhancement methods which manipulate particle numbers is minimized. It is shown that the method does not impair the one particle distribution function and that it is more stable in a stochastic sense than other equally general methods, because it conserves particle charge exactly. The method itself consumes only a few percent of the total CPU time spent for a simulation and does not cause any computational overhead in parallel calculations. The method is very flexible and easy to apply, because it acts only on the particle ensemble at certain times and does not interfere with the Monte Carlo simulation itself. The potential of the Multiple Refresh technique is demonstrated for different important device applications.
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相空间多重刷新:一种用于蒙特卡罗器件仿真的通用统计增强技术
提出了一种新的多重刷新技术,该技术可用于蒙特卡罗器件仿真过程中相空间统计量的增强,而不局限于遍历或静止系统。该方法允许在相空间的不同区域中指定模拟粒子的数量,从而直接控制这些区域中的噪声。它可以在不占用过多CPU时间的情况下,将罕见事件(例如热电子效应)的统计数据提高许多个数量级。处理粒子数的统计增强方法所固有的噪声和相关问题被最小化。结果表明,该方法不破坏单粒子分布函数,并且由于它能精确地守恒粒子电荷,因此在随机意义上比其他同样一般的方法更稳定。该方法本身只消耗用于模拟的总CPU时间的百分之几,并且不会在并行计算中造成任何计算开销。由于该方法仅在特定时间作用于粒子系综,而不干扰蒙特卡罗模拟本身,因此具有非常灵活和易于应用的特点。多重刷新技术的潜力在不同的重要设备应用中得到了展示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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